Strain in PbTe/SnTe heterojunctions grown on (001) KCI

Fedorenko, A. I.; Nashchekina, O. N.; Savitskiǐ, B. A.; Shpakovskaya, L. P.; Mironov, O.A.; Oszwałdowski, M.

doi:10.1016/0042-207x(92)90021-n

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…For SnTe layers thicker than 140 Å, we have observed a rapid decrease in sample quality, as indicated by rocking curve FWHM. This fact agrees with observations of Fedorenko et al, 7 who have measured a critical thickness around 100 Å for SnTe on PbTe. Above this thickness, the strain is relieved by the introduction of misfit dislocations, which cause degradation in crystalline quality.…”

Section: Sample Growthsupporting

confidence: 83%

Reciprocal space maps of PbTe/SnTe superlattices

Ferreira

Abramof

Rappl

et al. 1998

Journal of Applied Physics

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PbTe/SnTe superlattices were grown on ͑111͒ BaF 2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from completely pseudomorphic to partially relaxed. The superlattices structural properties were investigated by making reciprocal space maps around the asymmetric ͑224͒ Bragg diffraction points and /2⌰ scans for the ͑222͒ diffraction with a high resolution diffractometer in the triple axis configuration. With the strain information obtained from the maps, the ͑222͒ /2⌰ scan was simulated by dynamical diffraction theory. The simulated spectra of the pseudomorphic superlattices, in which the in-plane lattice constant is assumed to be the same as the PbTe buffer throughout the superlattice, fitted in a remarkably good agreement with the measured data, indicating that almost structurally perfect samples were obtained. For the thicker superlattices, the ͑224͒ reciprocal space maps revealed a complex strain profile. Our results show the importance of detailed structural characterization on the interpretation of the electrical properties.

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Section: Sample Growthsupporting

confidence: 83%

Reciprocal space maps of PbTe/SnTe superlattices

Ferreira

Abramof

Rappl

et al. 1998

Journal of Applied Physics

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“…3. A value of 9x10 8 cm −2 is found for the 7.09 µm thick SnTe film, which is much higher than 5x10 6 cm −2 reported for PbTe/BaF 2 film with equivalent thickness [7]. Since the lattice mismatch is smaller in the SnTe case, a smaller value for the dislocation density would be expected.…”

Section: Resultsmentioning

confidence: 74%

“…This kind of compound finds application in the construction of thermoelectric generators and infrared detectors [4][5]. The study of structural properties of IV-VI compounds related to misfit and threading dislocations in systems like PbTe, PbSe and PbTe 1−x Se x deposited on different substrates, such as KCl, BaF 2 , Si and PbSe have been done by several groups [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Characterization of SnTe films grown by molecular beam epitaxy

Mengui¹,

Abramof²,

Rappl³

et al. 2006

Braz. J. Phys.

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A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxy on (111) BaF 2 substrates. The SnTe lattice parameter was found to be 6.331Å as determined from x-ray diffraction spectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curves indicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy (AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similar to the PbTe on BaF 2 epitaxy. The dislocation density was estimated from the AFM picture to be 9x10 8 cm −2 . Small black pits corresponding to holes that were left during growth were also observed on the AFM images. Sn diffusion can be a possible reason for these pits and the relatively high dislocation density. Electrical measurements showed that the SnTe epilayers present a typical p-type carrier concentration around 10 20 cm −3 almost temperature independent and a Hall mobility which decreases from 10 4 to 10 3 cm 2 /V.s as the temperature increases from 10 to 350K.

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“…where a1 is the lattice constant of the layer, and a is the lattice constant of the second layer, being a substrate for the first.If the thickness ofthe first layer is t and its shear modulus is G1, and the thickness ofthe second layer is t and its shear modulus is G, then the strain in the first layer can be calculated from the formula1 e -fGt (9) x G,t,+ G8t…”

Section: Mismatch Accommodationmentioning

confidence: 99%