“…In the case of MBE grown MnAs/(0 0 1)GaAs epitaxial films, a two-phase coexistence region between a-and b-MnAs phases has been reported to occur in the temperature interval around T c [8]. This fact involves a separation of the film into ferromagnetic and paramagnetic stripe domains oriented along the c-axis [9]. It should be noted that when MnAs films are deposited on (0 0 1)GaAs, a-phase layers can be stabilized with two variants, A-type and B-type, depending on the epitaxial growth direction [10], although only single phase bMnAs with a B-type variant has been previously stabilized in MOVPE films [11,12].…”