Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure

Abstract

<p>The BP/SnSe vdW heterostructure is a promising photovoltaic materials and the power conversion efficiency can reach to 17.24%.</p>

Out-of-plane polarization modulated band alignments in β-In2X3/α-In2X3 (X = S and Se) vdW heterostructures

“…where the fill factor (β FF ) is set to 0.65, V OC , J SC , P solar , E g and ∆E c represent the open-circuit voltage, short circuit current, total incident solar energy, band gap of donor and conduction band offset, respectively. ZrS 3 /HfS 3 (16%-18%) [80], In 2 SSe 2 /In 2 SeS 2 (15.5%) [81], and SnS/GaSe (18%) [82], and is higher than ZrS 3 /MoS 2 (14.2%) [83], GaTe/InS (11%) [21], and BP/SnSe (11.96%) [84].…”

Highly-efficient heterojunction solar cells based on 2D Janus transition-metal nitride halide (TNH) monolayers with ultrahigh carrier mobility

“…65,66 Due to the small E d g and large CBO, the PCEs of the PtNCl/PdNF, PdNCl/PdNF, PtNCl/FeNF and PdNCl/FeNF heterostructures are below 10%. Inversely, a small CBO (0.04 eV) together with an appropriate E d g (1.38 eV) 53 lead to an optimal PCE value (23.45%) for the OsNCl/FeNCl heterostructure, which is competitive with the reported heterostructure materials (13.60% for PtS 2 /MoTe 2 , 67 17.24% for BP/SnSe 68 and 20.42% for MoS 2 /BP 69 ). The effects of the CBO and E d g on the PCE values can be clearly observed in Fig.…”

Efficient utilization of light energy based on MoS&lt;sub&gt;2&lt;/sub&gt;-XS (X=Al, B, Ga) heterostructures

“…根据定义， 太阳能电池材料的性能可以通过能量转换效率(power conversion efficiency, PCE)来定量 评估 [50] : [51] , E g 和 ΔE c 分别是施主带隙和导带偏移(conduction band offset, CBO 异质结构太阳能电池，如 PCBM/CBN(10-20%) [52] ，g-SiC/GaN(12-20%) [53] ，SnO 2 /TiO 梯度异质结 (18.08%) [54] ， 2D GaX/SnS 2 (16%) [55] ， 钙钛矿基异质结构(21.02%) [56] 和 BP/SnSe(17.24%) [57] recombination of carriers. Therefore, the electrons and holes that can be actually used in the reaction are significantly reduced.…”