Strain engineering of topological properties in lead‐salt semiconductors

Barone, Paolo; Sante, Domenico Di; Picozzi, Silvia

doi:10.1002/pssr.201308154

Cited by 29 publications

(27 citation statements)

References 34 publications

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“…This causes a shift in the position of the low-energy Dirac points + and − along the mirror-symmetric line X 1 in opposite directions by an equal amount. This Dirac point shift under uniform strain, which we deduce from symmetry analysis here, has been found in recent ab initio calculations [20,21].…”

Section: B Strainsupporting

confidence: 85%

Symmetry breaking and Landau quantization in topological crystalline insulators

2014

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In the recently discovered topological crystalline insulators SnTe and Pb 1−x Sn x (Te, Se), crystal symmetry and electronic topology intertwine to create topological surface states with many interesting features including Lifshitz transition, Van-Hove singularity, and fermion mass generation. These surface states are protected by mirror symmetry with respect to the (110) plane. In this work we present a comprehensive study of the effects of different mirror-symmetry-breaking perturbations on the (001) surface band structure. Pristine (001) surface states have four branches of Dirac fermions at low energy. We show that ferroelectric-type structural distortion generates a mass and gaps out some or all of these Dirac points, while strain shifts Dirac points in the Brillouin zone. An in-plane magnetic field leaves the surface state gapless, but introduces asymmetry between Dirac points. Finally, an out-of-plane magnetic field leads to discrete Landau levels. We show that the Landau level spectrum has an unusual pattern of degeneracy and interesting features due to the unique underlying band structure. This suggests that Landau level spectroscopy can detect and distinguish between different mechanisms of symmetry breaking in topological crystalline insulators.

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Section: B Strainsupporting

confidence: 85%

Symmetry breaking and Landau quantization in topological crystalline insulators

2014

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“…As mentioned by Hsieh et al 42 , with the lattice constant decreasing, PbTe can be changed from a NI to a TCI. Such topological phase transition also occurs for other lead chalcogenides under external pressure or volume compression 80,81 ; while for the volume expansion, SnS and SnSe can be transformed from an ambient pressure TCI to a topologically trivial insulator 82 .…”

Section: A Strain Effect On Bulk: Topological Phase Transitionmentioning

confidence: 82%

Electronic properties of SnTe-class topological crystalline insulator materials

Wang

Huang

et al. 2016

Chinese Phys. B

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The rise of topological insulators in recent years has broken new ground both in the conceptual cognition of condensed matter physics and the promising revolution of the electronic devices. It also stimulates the explorations of more topological states of matter. Topological crystalline insulator is a new topological phase, which combines the electronic topology and crystal symmetry together. In this article, we review the recent progress in the studies of SnTe-class topological crystalline insulator materials. Starting from the topological identifications in the aspects of the bulk topology, surface states calculations and experimental observations, we present the electronic properties of topological crystalline insulators under various perturbations, including native defect, chemical doping, strain, and thickness-dependent confinement effects, and then discuss their unique quantum transport properties, such as valley-selective filtering and helicity-resolved functionalities for Dirac fermions. The rich properties and high tunability make SnTe-class materials promising candidates for novel quantum devices.

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“…Our observations are captured by a tight binding model, and provide experimental support for the existing body of theoretical work studying the role of surface orientations in TCI materials. Finally, our demonstration of successfully growing and measuring (Pb,Sn)Se films constitutes an important step towards future studies, enabling investigations into the role of strain 25 (through lattice-mismatch from different substrates), additional surface orientations (for example the (110) facet) and atomic step density through substrate vicinality.…”

Section: Discussionmentioning

confidence: 99%

Observation of topological crystalline insulator surface states on (111)-oriented Pb1−xSnxSe films

Polley

Dziawa²,

Reszka³

et al. 2014

Phys. Rev. B

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We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb1−xSnxSe, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion atΓ andM in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.

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Strain engineering of topological properties in lead‐salt semiconductors

Cited by 29 publications

References 34 publications

Symmetry breaking and Landau quantization in topological crystalline insulators

Symmetry breaking and Landau quantization in topological crystalline insulators

Electronic properties of SnTe-class topological crystalline insulator materials

Observation of topological crystalline insulator surface states on (111)-oriented Pb1−xSnxSe films

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