2019
DOI: 10.1103/physrevlett.123.036806
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Strain Engineering of the Berry Curvature Dipole and Valley Magnetization in Monolayer MoS2

Abstract: The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here we theoretically demonstrate and experimentally verify for monolayer MoS2 the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature dipole. The measured va… Show more

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Cited by 128 publications
(56 citation statements)
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“…In this paper, we study the interplay between strain and the interlayer asymmetry gap [1] in BLG in deter- mining topological properties of electronic states, such as the Berry curvature, recently analyzed in [18], and the topological magnetic moment, and their manifestations in the magnetotransport characteristics and Landau level spectra of bilayers. The outcome of this analysis is summarized in Fig.…”
mentioning
confidence: 99%
“…In this paper, we study the interplay between strain and the interlayer asymmetry gap [1] in BLG in deter- mining topological properties of electronic states, such as the Berry curvature, recently analyzed in [18], and the topological magnetic moment, and their manifestations in the magnetotransport characteristics and Landau level spectra of bilayers. The outcome of this analysis is summarized in Fig.…”
mentioning
confidence: 99%
“…One of the promising candidates is the transition metal dichalcogenides (TMDs), which is defined by a general formula of MX 2 with M corresponding to transition metal, and X corresponding to chalcogen S, Se, or Te. Researches on 2D TMDs are steadily gaining traction because of recent findings for the improvement in crucial technological applications, such as in energy storage [4,5], gas sensing [6,7], and valley physics [8][9][10]. Moreover, it can be straightforwardly synthesized by exfoliating the bulk structures to produce the corresponding 2D structures due to weak interlayer interactions governed by van der Waals forces.…”
Section: Introductionmentioning
confidence: 99%
“…These contributions to l y can be ignored in the regime of low temperatures. We have checked that our results for NLATHE are robust against all the monotonous modulation of the band gap such as tuning effect by external field [47], finite-temperature effects such as electron-phonon coupling [48], doping effect through the mixing of chalcogens in MoX 2 (X = S, Se, or Te) [49], etc., as well as strength of the tilting parameter due to uniaxial strain [50][51][52][53]. (14).…”
mentioning
confidence: 99%