2021
DOI: 10.1016/j.matt.2021.02.006
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Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

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Cited by 25 publications
(37 citation statements)
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“…Here, we use Al 2 O 3 (10)(11)(12) wafers as the substrates to grow a-ZnO epitaxial films, and the results are shown in Figure S1 in the Supporting Information. One of the most striking findings is that the ZnO lattice exhibits an out-of-plane tilt with respect to the substrate surface, as revealed by the V-shaped pattern in the contour plotting of the ZnO (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) ω−ϕ scan (Figure 1a). At azimuthal angles of 0 and 360°, ω is centered at 28.5°; at ϕ = 180°, it peaks at 28.0°.…”
Section: Resultsmentioning
confidence: 96%
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“…Here, we use Al 2 O 3 (10)(11)(12) wafers as the substrates to grow a-ZnO epitaxial films, and the results are shown in Figure S1 in the Supporting Information. One of the most striking findings is that the ZnO lattice exhibits an out-of-plane tilt with respect to the substrate surface, as revealed by the V-shaped pattern in the contour plotting of the ZnO (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) ω−ϕ scan (Figure 1a). At azimuthal angles of 0 and 360°, ω is centered at 28.5°; at ϕ = 180°, it peaks at 28.0°.…”
Section: Resultsmentioning
confidence: 96%
“…13 On the other hand, a Ca 0.96 Ce 0.04 MnO 3 interlayer that has similar in-plane lattice constants with T-BFO was used and the highly elongated phase can be formed on arbitrary ABO 3 substrates. 14 Very recently, defect engineering by helium implantation was proposed to modify the structure of BFO in a continuous manner. 15 Experimentally, this scheme not only stabilizes the T-like phase but also enables a flexible control on tetragonality and polarization symmetry.…”
Section: Introductionmentioning
confidence: 99%
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