Strain-engineering of anisotropic behavior in the electrical and optical properties of graphene-like borophene hydride, a DFT calculation

Group-IIIA element doped BaSnS2 as a high efficiency absorber for intermediate band solar cell from a first-principles insight

“…Strain engineering is widely applied to modulate the electronic structure and subsequently impact the performance of functional materials. [70][71][72] To investigate the effects of strain engineering on group-IIIA elements doped BaSnS 2 , the compressive and tensile strains were imposed using the following equation: e ¼ a strained À a relaxed a relaxed  100%. 73 The strain range is set from À4% to 4% in BaSnS 2 with group-IIIA element doping at Sn site at 25% doping concentration.…”