2020
DOI: 10.1038/s41586-019-1868-x
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Strain engineering and epitaxial stabilization of halide perovskites

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Cited by 437 publications
(542 citation statements)
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“…For example, strained epitaxy is also shown to have a substantial stabilization effect on the perovskite phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. [29] Metal oxide nanomaterials with the high hardness as main media of CMP have been extensively used to smooth the surface of silicon wafers in integrated circuit manufacturing, which can polish high hardness materials to produce high activity surface. Therefore, the metal oxides NPs as "balls" of milling can provide high mechanical energy to interact with the surface atoms of perovskite NCs in the synthetic process of ball-grinding or ball-milling.…”
Section: Resultsmentioning
confidence: 99%
“…For example, strained epitaxy is also shown to have a substantial stabilization effect on the perovskite phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. [29] Metal oxide nanomaterials with the high hardness as main media of CMP have been extensively used to smooth the surface of silicon wafers in integrated circuit manufacturing, which can polish high hardness materials to produce high activity surface. Therefore, the metal oxides NPs as "balls" of milling can provide high mechanical energy to interact with the surface atoms of perovskite NCs in the synthetic process of ball-grinding or ball-milling.…”
Section: Resultsmentioning
confidence: 99%
“…Inorganic transporting underlays such as TiO 2 , [6] ZnO, [7] SnO 2 , [8] and NiO [9] are commonly employed as heterogeneous substrates for perovskite films formation, which inevitably results in an interface with nonideal compatibility, and the unsatisfied interconnection are disastrous for carrier collection. [10] More importantly, less matched crystal structure and inconsistent thermal expansion of rigid lattice units in each sides are detrimental to microstructure of perovskite. In molecular level, poor phase stability induced by strain accumulation effect has been demonstrated in perovskite materials, simultaneously, unreleasable lattice stress is also the reason for accelerated materials degeneration.…”
Section: Doi: 101002/adma202001479mentioning
confidence: 99%
“…In molecular level, poor phase stability induced by strain accumulation effect has been demonstrated in perovskite materials, simultaneously, unreleasable lattice stress is also the reason for accelerated materials degeneration. [10] Moreover, such heterogeneous interface with intrinsic structurebrittleness is inherently fragile once suffering from mechanical deformation. All these issues are key bottlenecks which restrict the devices' stability and its flexible application.…”
Section: Doi: 101002/adma202001479mentioning
confidence: 99%
“…In addition to the extensively studied materials interfaces between the hybrid halide perovskites and TiO 2 , it is noted that the materials heterointerfaces between the classical inorganic perovskite oxides such as SrTiO 3 and TiO 2 has also attracted increasing attention because of the emerging interfacial properties and/or enhanced functionalities [23,197]. One major consideration is that the formed heterointerface has a better stability compared to the isolated bulk materials [23,198]. In 2017, Kitchin's research team explored the possibility to stabilize the epitaxial thin films of anatase and rutile TiO 2 on perovskite (Sr/Ba)TiO 3 by studying relevant bulk and interface energy terms using first-principles calculations [23].…”
Section: Tio 2 /Perovskite Interfacementioning
confidence: 99%