Strain engineered C₃₁ field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states

Abstract

A novel steep-slope field-effect-transistor is proposed to break the thermionic limit by using the intrinsic isolated states in materials. The monolayer C 31 is used as the injection source to self-filter out high-energy electrons and strain engineering is adopted to modulate the energy gap and IS width. It is found that, under 8% biaxial tensile strain, the calculated subthreshold swing is as low as ∼28.7 mV dec −1 with a high current ratio (I ON /I OFF ) of ∼3.9 × 10 7 , demonstrating that the proposed strategy could be a promising candidate for the future developments of low-power nanodevices.

Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study

“…Too small ΔE would cause a DOS mismatch between the source and drain, which was thoroughly discussed in previous studies. 22,40 Thus, the bias voltage plays an important role in the device performance based on the isolated band transport. Furthermore, we discussed the impacts of edge roughness and defects on device performances.…”

“…Materials and structures including the Dirac source, cold metal, and the tunneling junction have been proposed as the cold source for CS-FETs. Recently, isolated-state FETs (IS-FETs) were reported by utilizing the isolated states of the source electrode to filter out the thermal tails. , Compared with the CS-FETs, the IS-FETs are free from the geometric complexity in the source − and employ simple electrode structures similar to that of conventional metal-oxide semiconductor field-effect transistors (MOSFETs).…”

P-type cold-source field-effect transistors with TcX 2 and ReX 2 (X = S, Se) cold source electrodes: A computational study

“…By modulating the density of states (DOS) of the source electrode, the recently proposed cold source FETs (CS-FETs) can realize the steep switching and high on-state current (I on ) simultaneously. [25][26][27][28] Structures including Dirac semimetals, [25] semiconductors, [29] isolated states, [30,31] and tunneling junctions [32] have been proposed as the source electrodes of CS-FETs. However, these structures have to be artificially doped, which is challenging for two-dimensional semiconductors.…”

Transition from Schottky to ohmic contacts in the C31 and MoS2 van der Waals heterostructure

“…22 Based on the unique electronic properties of C 31 , researchers have utilized strain engineering to predict the fabrication of low-power cold-source devices. 24 It is not just a metal substance, but it also has a lower work function than graphene, making ohmic interaction with MoS 2 easier. Based on these advantages, we construct the van der Waals heterostructure of C 31 and MoS 2 for electronic property analysis.…”