Strain effects on radiation tolerance of quantum dot solar cells

Kerestes, Christopher; Forbes, David V.; Bittner, Zac; Polly, Stephen J.; Lin, Yong; Richards, B. C.; Sharps, Paul; Hubbard, Seth M.

doi:10.1109/pvsc.2012.6318172

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…QDs are, thus desirably used to absorb specific parts of the solar spectrum within solar cells. In addition, they exhibit radiation tolerance as compared to their bulk counterpart, making them more suitable for space applications [2], [3]. More importantly, semiconductor QD solar cells (QDSCs) have the prerequisites for several proposed concepts for third generation photovoltaic, such as hot carrier [4], multi-exciton generation [5], and especially intermediate band solar cells (IBSC) [6], [7] which has an overwhelming theoretical efficiency of 63%.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Lam

Hatch

et al. 2015

IET Optoelectronics

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The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) has been studied. A significant improvement in photoemission, photocurrent density, and spectral response has been observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm -2 for as-grown sample to 5.8 mA cm -2 . We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal anneal treatment of QDSCs is demonstrated as a simple route for achieving improved device performance.

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Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Lam

Hatch

et al. 2015

IET Optoelectronics

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“…Indeed, the ultimate goal of the present research is to analyze the possible use of the MQWs to enhance the MJ performance at both beginning of life (BOL), i.e., prior to radiation, and end of life (EOL), i.e., after radiation. Previous publications have shown that the radiation response of an MQW solar cell can vary significantly, depending on the specific solar cell design [3], [6]- [13]. The external quantum efficiency (EQE) at wavelengths associated with the MQW region, i.e., at wavelengths longer than the bandgap of the bulk material, has been reported to be relatively insensitive to radiation.…”

mentioning

confidence: 99%

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Hoheisel

González

Lumb

et al. 2014

IEEE J. Photovoltaics

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In this paper, a detailed analysis on the radiation response of solar cells with multi quantum wells (MQW) included in the quasi-intrinsic region between the emitter and the base layer is presented. While the primary source of radiation damage of photovoltaic devices is minority carrier lifetime reduction, we found that in the case of MQW devices, carrier removal (CR) effects are also observed. Experimental measurements and numerical simulations reveal that with increasing radiation dose, CR can cause the initially quasi-intrinsic background doping of the MQW region to become specifically n-or p-type. This can result in a significant narrowing and even the collapse of the electric field between the emitter and the base where the MQWs are located. The implications of the CR-induced modification of the electric field on the current-voltage characteristics and on the collection efficiency of carriers generated within the emitter, the MQW region, and the base are discussed for different radiation dose conditions. This paper concludes with a discussion of improved radiation hard MQW device designs.Index Terms-III-V semiconductor materials, photovoltaic cells, quantum-well devices, radiation effects.

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Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices

Welser

Polly

Kacharia

et al. 2019

Sci Rep

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Nanostructured quantum well and quantum dot III–V solar cells provide a pathway to implement advanced single-junction photovoltaic device designs that can capture energy typically lost in traditional solar cells. To realize such high-efficiency single-junction devices, nanostructured device designs must be developed that maximize the open circuit voltage by minimizing both non-radiative and radiative components of the diode dark current. In this work, a study of the impact of barrier thickness in strained multiple quantum well solar cell structures suggests that apparent radiative efficiency is suppressed, and the collection efficiency is enhanced, at a quantum well barrier thickness of 4 nm or less. The observed changes in measured infrared external quantum efficiency and relative luminescence intensity in these thin barrier structures is attributed to increased wavefunction coupling and enhanced carrier transport across the quantum well region typically associated with the formation of a superlattice under a built-in field. In describing these effects, a high efficiency (>26% AM1.5) single-junction quantum well solar cell is demonstrated in a device structure employing both a strained superlattice and a heterojunction emitter.

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Strain effects on radiation tolerance of quantum dot solar cells

Cited by 6 publications

References 13 publications

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices

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