“…Recently, many reports have demonstrated that the tensile strain causes lattice distortion of the microscopic crystal structure, weakens the bonds, induces the defects, reduces the activation energy for ion migration, and further accelerates the degradation of perovskites. ,, The tensile strain is mainly caused by the heterogeneous crystallization of the polycrystalline perovskite and the thermal expansion mismatch (e.g., 3.70 × 10 –6 K –1 for glass, 9.86 × 10 –5 K –1 for α-FAPbI 3 ) between the perovskites and the substrates during the annealing process, which can hardly be modulated by the postannealing treatment. − Strain engineering has been developed as an efficient approach to enhance the performance and stability of PSCs, because it can affect the band structure of the perovskite, the formation energy of defects, the activation energies for halide ion migration, and the intrinsic stability of the photoactive perovskite phase. − In this context, three approaches have been reported to mitigate the harmful tensile strain in the fabrication process of perovskite films: (i) decreasing the local crystal misorientation by optimizing the nucleation and film growth of the perovskite; (ii) fabricating the perovskite films under a low-temperature procedure or reducing the gap of thermal expansion coefficients between the perovskite and the substrate; , (iii) utilizing additives with various flexible chains to facilitate the release of residual strain at grain boundaries. , Despite their effectiveness in bringing down the tensile strain in perovskite films, these approaches possess limitations to further enhancing the efficiency and stability of PSCs . Moreover, a high annealing temperature (e.g., 150 °C) is vital to promote sufficient conversion from δ phase to α phase of FAPbI 3 perovskite.…”