Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles

Gupta, Tanya; Hannon, James B.; Tersoff, J.; Tromp, R. M.; Ott, J. A.; Bruley, J.; Steingart, Daniel Artemus

doi:10.1021/nl502516y

Cited by 4 publications

(6 citation statements)

References 26 publications

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“…484 The growth mechanism is similar to the molecular beam epitaxial growth of 2D transition metal chalcogenides/nitrides, 485 but different from the growth of SiC on Si support, and involves the formation of Si mound driven by strain. 486 Meanwhile, the experimental and calculated results in this work demonstrated that the h-Ti terminated Ti 3 C 2 substrate plays a critical role in inducing the formation of single layer h-TiC, thereby providing an insight into the fabrication of single layered transition metal carbides on the hexagonal metal surface of hcp metal compounds or pure hcp metals.…”

Section: Pbsmentioning

confidence: 67%

“…Recent, Unocic, Sang, and co-workers examined the growth of single layered h -TiC on the surface of Ti 3 C 2 MXene substrates under heating by in situ AC-STEM in combination with DFT calculations and simulations, and uncovered the homoepitaxial Frank–van der Merwe atomic layer growth mechanism through surface diffusion of source atoms on the support . The growth mechanism is similar to the molecular beam epitaxial growth of 2D transition metal chalcogenides/nitrides, but different from the growth of SiC on Si support, and involves the formation of Si mound driven by strain . Meanwhile, the experimental and calculated results in this work demonstrated that the h -Ti terminated Ti 3 C 2 substrate plays a critical role in inducing the formation of single layer h -TiC, thereby providing an insight into the fabrication of single layered transition metal carbides on the hexagonal metal surface of hcp metal compounds or pure hcp metals.…”

Section: Metal Compoundsmentioning

confidence: 99%

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In Situ Kinetic Observations on Crystal Nucleation and Growth

Deepak

2022

Chem. Rev.

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Nucleation and growth are critical steps in crystallization, which plays an important role in determining crystal structure, size, morphology, and purity. Therefore, understanding the mechanisms of nucleation and growth is crucial to realize the controllable fabrication of crystalline products with desired and reproducible properties. Based on classical models, the initial crystal nucleus is formed by the spontaneous aggregation of ions, atoms, or molecules, and crystal growth is dependent on the monomer’s diffusion and the surface reaction. Recently, numerous in situ investigations on crystallization dynamics have uncovered the existence of nonclassical mechanisms. This review provides a summary and highlights the in situ studies of crystal nucleation and growth, with a particular emphasis on the state-of-the-art research progress since the year 2016, and includes technological advances, atomic-scale observations, substrate- and temperature-dependent nucleation and growth, and the progress achieved in the various materials: metals, alloys, metallic compounds, colloids, and proteins. Finally, the forthcoming opportunities and challenges in this fascinating field are discussed.

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Section: Pbsmentioning

confidence: 67%

Section: Metal Compoundsmentioning

confidence: 99%

In Situ Kinetic Observations on Crystal Nucleation and Growth

Deepak

2022

Chem. Rev.

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“…Relatively to the average in-plane lattice parameters of the same structures on the rigid substrate (figure 2(a)), the observed in-plane lattice parameters are larger by 0.48%, 1.50% and 0.02%, as denoted by the position of the relaxed InAs peak, coherent InAs contribution and intermediate peak, respectively. These values indicate that the strain inside the coherent islands is released more effectively on the nanomembrane structure in comparison with the originally asgrown layers [39,40]. On the other hand, a small amount of strain is still present on relaxed InAs islands (which must be due to the substrate compliance) while the intermediate peak structures shows no relaxation after the nanomembrane formation.…”

Section: X-ray Diffractionmentioning

confidence: 90%

Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes

et al. 2017

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In this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such conditions TEM provides improved real-space statistics, allowing the observation of partial relaxation processes that were not previously detected by other techniques or by usual TEM cross section images. Besides the fully coherent and fully relaxed islands that are known to exist above previously established critical thickness, we prove the existence of partially relaxed islands, where incomplete 60° half-loop misfit dislocations lead to a lattice relaxation along one of the 〈110〉 directions, keeping a strained lattice in the perpendicular direction. Although individual defects cannot be directly observed, their implications to the resulting island registry are identified and discussed within the frame of half-loops propagations.

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“…Even though the substrate is the primary source of epitaxial strain and other related crystallographic effects, its morphology is not expected to be affected by the overgrowth. This notion changed completely when Gupta et al studied SiC nanoparticles grown on Si (001) at 900 °C and found massive migration of Si forming a crystalline Si mound underneath SiC nanoparticles . While the results of Gupta et al apply to classical semiconductor systems, a question is whether such a phenomenon can also occur during the synthesis of oxide nanocrystals on supports.…”

Section: Introductionmentioning

confidence: 99%

“…This notion changed completely when Gupta et al studied SiC nanoparticles grown on Si (001) at 900 °C and found massive migration of Si forming a crystalline Si mound underneath SiC nanoparticles. 13 While the results of Gupta et al apply to classical semiconductor systems, a question is whether such a phenomenon can also occur during the synthesis of oxide nanocrystals on supports. This is important because, to date, research on encapsulation has been focused largely on metal/metal oxide systems.…”

Section: ■ Introductionmentioning

confidence: 99%

Encapsulation of Metal Oxide Nanoparticles by Oxide Supports during Epitaxial Growth

Cheng

Cheang-Wong

Weyland

et al. 2019

ACS Appl. Electron. Mater.

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The traditional view of complex oxide heteroepitaxy is that the substrate is merely a passive bystander. Here we show that this is not always the case, in particular for a metal oxide/metal oxide interface during the synthesis of epitaxial nickel oxide (NiO) nanoislands on (001) strontium titanate (SrTiO 3 −STO) single crystal substrates. We find that the substrate atoms are driven to encapsulate the metal oxide nanocrystal islandsa phenomenon more commonly reported for metal/metal oxide heterogeneous catalysis where the migration of atoms from the support onto the functional nanoparticle system is driven by strong metal− support interactions (SMSI). High-resolution transmission electron microscopy (HRTEM), high angle angular dark field (HAADF) scanning transmission electron microscopy (STEM), and electron tomography (ET) are used to reveal a clear physical displacement of the interface; the atoms from the STO substrate climb and cover the bottom facets of NiO nanoparticles during the synthesis process during which a unique caldera-shaped structure is formed. It is postulated that this phenomenon occurs to lower the work function and surface energy of the system. These results indicate that the SMSI could be important in the metal oxide/metal oxide systems. In this way changes to the substrate−film interface could be exploited by controlling and modifying the properties of nanoscaled functional oxides.

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Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles

Cited by 4 publications

References 26 publications

In Situ Kinetic Observations on Crystal Nucleation and Growth

In Situ Kinetic Observations on Crystal Nucleation and Growth

Observation of partial relaxation mechanisms via anisotropic strain relief on epitaxial islands using semiconductor nanomembranes

Encapsulation of Metal Oxide Nanoparticles by Oxide Supports during Epitaxial Growth

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