Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3

Wong, Anthony T.; Beekman, Christianne; Guo, Hangwen; Siemons, Wolter; Gai, Zheng; Arenholz, Elke; Takamura, Yayoi; Ward, Thomas Z.

doi:10.1063/1.4892420

Cited by 23 publications

(15 citation statements)

References 29 publications

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“…This observation could be explained by the AFM moments in SMO being easier to rotate gradually when driven by a large rotating field than to reverse abruptly when sweeping the magnetic field, producing 144431-3 a stronger spin absorption for H//I compared with that for H ⊥ I, and thus a higher resistance for the former case (0°a nd 180°). Such moment rotation in the AFM insulator is supported by similar findings in AFM semiconductors and manganites [34,35].…”

Section: B Angular Dependence Of the Smrsupporting

confidence: 78%

Antiferromagnet-controlled spin current transport inSrMnO3/Pthybrids

Han

Song

et al. 2014

Phys. Rev. B

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We investigate the spin Hall magnetoresistance (SMR) in SrMnO 3 (SMO)/Pt hybrids, where SMO is an antiferromagnetic (AFM) insulator. The AFM moments partially rotate with out-of-plane magnetic fields, producing room-temperature SMR. By manipulating the electron spins in Pt, we observe Larmor precessioninduced oscillating SMR, reaffirming the spin current transport determined by the relative arrangement between the Pt electron spins and AFM moments. The use of the AFM with no net moments annihilates the magnetic proximity effect and thus confirms the SMR origination from AFM-controlled spin current transport, with significant spin mixing conductance of ∼10 17 m −2 . Our findings provide an interesting perspective to detecting AFM moments and represent a significant step towards AFM spintroincs.

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Section: B Angular Dependence Of the Smrsupporting

confidence: 78%

Antiferromagnet-controlled spin current transport inSrMnO3/Pthybrids

Han

Song

et al. 2014

Phys. Rev. B

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“…By then cooling back into the antiferromagnetic phase with the field still applied, the antiferromagnetic spin direction can be controlled. Other experiments used antiferromagnets exchange coupled to a ferromagnet, 18,19 large magnetic fields 20,21 or electrical current 2 (as we discuss in depth later) to manipulate the antiferromagnetic moments. The full functional form of AMR, shown in Fig.…”

Section: Anisotropic Magnetoresistancementioning

confidence: 99%

Spin transport and spin torque in antiferromagnetic devices

et al. 2018

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Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

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“…For instance, in some materials, the pressure dependence deviates from its bulk behavior. This is mainly due to i) geometric anisotropy that arises when grain size is commensurate with the film thickness making the film quasi two-dimensional, ii) substrate clamping, that affects thin films under pressure by fixing their in-plane elastic response 16 or iii) complex thin film microstructure that can affect many properties by changing local strain [17][18][19] .…”

Section: Introductionmentioning

confidence: 99%

Deviation from bulk in the pressure-temperature phase diagram of V2O3 thin films

et al. 2017

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We found atypical pressure dependence in the transport measurements of the metal to insulator transition (MIT) in epitaxial thin films of vanadium sesquioxide (V 2 O 3). Three different crystallographic orientations and four thicknesses, ranging from 40 nm to 500 nm, were examined under hydrostatic pressures (P h) of up to 1.5 GPa. All of the films at transition exhibited a four order of magnitude resistance change with transition temperatures ranging from 140 K to 165 K depending on the orientation. This allowed us to build pressure-temperature phase diagrams several orientations and film thicknesses. Interestingly, for pressures below 500 MPa, all samples deviate from bulk behavior and show a weak transition temperature (T c) pressure dependence (dT c /dP h = 1.2x10-2 ±0.3x10-2 K/MPa), which recovers to bulk-like behavior (3.9x10-2 ±0.3x10-2 K/MPa) at higher pressures. Furthermore, we found that pressurization leads to morphological but not structural changes in the films. This indicates that the difference in the thin film and bulk pressure-temperature phase diagrams is most probably due to pressureinduced grain boundary relaxation as well as both plastic and elastic deformations in film microstructure. These results highlight the difference between bulk and thin films behaviors.

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Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3

Cited by 23 publications

References 29 publications

Antiferromagnet-controlled spin current transport inSrMnO3/Pthybrids

Antiferromagnet-controlled spin current transport inSrMnO3/Pthybrids

Spin transport and spin torque in antiferromagnetic devices

Deviation from bulk in the pressure-temperature phase diagram of V2O3 thin films

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