Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates

Abstract

The strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates has been studied using secondary ion mass spectrometry, Raman spectroscopy, and simulations. At 800 and 880 °C, significantly enhanced Si–Ge interdiffusion is observed in Si∕Si1−yGey∕Si heterostructures (y=0.56, 0.45, and 0.3) with Si1−yGey layers under compressive strain of −1%, compared to those under no strain. In contrast, tensile strain of 1% in Si0.70Ge0.30 layer has no observable effect on interdiffusion in Si∕Si0.70Ge0.30∕Si heterostructures. These results are relevant to the device and process design of high mobility dual channel and heterostructure-on-insulator metal oxide semiconductor field effect transistors.

Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model

“…It is of highest relevance to simulation of interdiffusion in the fabrication of doped SiGe devices. The calibration for undoped SiGe is based on data published in [3][4][5][6][7][8][9][10]13,15]. The accuracy achieved is very satisfactory: for most interdiffusion data extracted (440 experiments in total), we obtain a good match between TCAD results and SIMS.…”

“…Analyzing interdiffusion data for epi-layers deposited on relaxed SiGe of various mole fractions [7,8] allowed to study the impact of compressive and tensile stress on interdiffusivity.…”

Investigation of InAs/GaSb-based superlattices by diffraction methods

“…4), a clear tendency to find larger X-values at larger strains is revealed. This phenomenon, which possibly is related to the strain-enhanced atomic diffusion [18,19], deserves further investigation. Nevertheless, in order to diminish the atomic intermixing, it is important to keep the average strain as small as possible.…”

Evolution of the cathodoluminescence spectral shape and intensity of GaN quantum dots under 10 keV electron beam irradiation

“…Regarding the blue shift of the larger QDs observed at a high J value, we suggest a possible diffusion of Al from AlGaN barriers to the dots. The interdiffusion, which is known to be enhanced by compressive strain [18][19][20][21][22] usually occurs at high temperature. Under e-beam injection at 300 K, it could be activated by non-radiative (NR) recombinations.…”