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Laverock, J.; Piper, Louis F. J.; Preston, A. R. H.; Chen, Bin; McNulty, James; Smith, Kevin; Kittiwatanakul, Salinporn; Lu, Jiwei; Wolf, Stuart A.; Glans, Per‐Anders; Guo, Jinghua

doi:10.1103/physrevb.85.081104

Cited by 33 publications

(24 citation statements)

References 28 publications

(42 reference statements)

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“…13 The luminous transmittance can be boosted by magnesium substitution [14][15] and by fluorination. 16 The metal-insulator transition can be influenced by a variety of external parameters, and recent work have considered the effects of strain [17][18][19] and lattice misfit with the substrate, 20,21 electric field or current activation, [22][23][24][25][26][27][28][29][30][31] light irradiation, [32][33][34][35][36][37][38] ion bombardment, 39,40 and gaseous ambience. 41 Considering the wealth of possibilities to modulate the properties of VO 2 -based thin films, it is not surprising that they are discussed for a vast number of applications such as thermochromic "smart" windows for energy efficient buildings, [42][43][44][45][46][47][48][49][50] variable-thermal-emittance surfaces for thermal radiation control, 51 oscillators and switches in (opto)electronics, 25,26,34,52,53 transistors of different types, <...>…”

Section: Introductionmentioning

confidence: 99%

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

Namura

Suzuki

et al. 2013

Journal of Applied Physics

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Thermochromic VO 2 nanorods made by sputter deposition: Growth conditions and optical modeling. Reactive dc magnetron sputtering onto glass-based substrates yielded deposits of thermochromic VO 2 with well-developed nanorods and nanowires. Their formation was promoted by high substrate temperature (above ~500 °C), sufficient film thickness, proper inlet of the reactive gas, dispersed gold "seeds" and pronounced substrate roughness. Rutherford back scattering ascertained mass thicknesses, scanning electron microscopy depicted the nanostructures, and glancing incidence Xray diffraction proved that single-phase VO 2 was normally formed. Journal of Applied PhysicsSpectrophotometric measurements of total and diffuse transmittance and reflectance on VO 2 thin films, at room temperature and ~100 °C, allowed us to determine complex dielectric functions below and above the "critical" temperature for thermochromic switching (~68 °C). These data were then used in computations based on the Bruggeman effective medium theory applied to randomly oriented prolate spheroidal structural units to derive the optical properties of the deposits.Experimental and computed data on spectral absorptance were found to be in good qualitative agreement.

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Section: Introductionmentioning

confidence: 99%

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

Namura

Suzuki

et al. 2013

Journal of Applied Physics

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“…Our results agree with (i) and (iii), while strain-induced cracking prevents an accurate description of the effect mentioned in (ii). Further theoretical investigations should take into account not only strain [4] but also the oxygen degrees of freedom [80] in order to provide a more accurate description of the O2p and V3d orbitals overlap, most relevant for describing the conductivity in the ab R -plane, and of the cracking along c R . Such estimates would be adequate for a quantitative, rather than merely qualitative, comparison with our experimental data.…”

Section: Discussionmentioning

confidence: 99%

THz spectroscopy of VO₂epitaxial films: controlling the anisotropic properties through strain engineering

Abreu

Liu²,

Lu³

et al. 2012

New J. Phys.

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Optical properties across the insulator to metal transitions in vanadium oxidecompounds A Perucchi, L Baldassarre, P Postorino et al. Abstract. We use THz time-domain spectroscopy to investigate the farinfrared properties of vanadium dioxide thin films, strain-engineered through epitaxial growth on (100) R TiO 2 substrates. The films exhibit a large uniaxial tensile strain along the rutile c-axis. X-ray diffraction measurements reveal a structural transition temperature of 340 K, whereas independent THz conductivity measurements yield a metal-insulator transition temperature of 365 K along c R . Analysis of these results suggests a Mott-Hubbard behavior along the c R -axis. Along c R the conductivity is approximately 5500 ( cm) −1 , comparable to bulk single crystals. The tensile strain leads to remarkably uniform cracking oriented along the rutile c-axis, resulting in a large conductivity anisotropy in our single-crystal epitaxial thin films. We discuss our results in the context of previous measurements and calculations of the properties of VO 2 , under different strain conditions. This work demonstrates the potential of strain engineering to tune the properties of complex materials while also serving as a powerful discriminatory tool for probing microscopic responses. 4 These authors contributed equally to this work.

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“…That compressive strain results in a lowering of the energy of the band is supported by X-ray emission spectroscopy experiments on strained VO 2 films grown on TiO 2 . 40 The slight lowering of the filled bands relative to the bands could account for the prominence of the pseudo-gap type feature "p" if this feature is due to optical transitions between those two bands. This lowering in energy of the band, due to compressive strain, would increase the occupation of the bottom half of the band.…”

Section: Assignment Of Spectral Featuresmentioning

confidence: 99%

Modification of electronic structure in compressively strained vanadium dioxide films

Huffman

Hollingshad

et al. 2015

Phys. Rev. B

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Vanadium dioxide (VO 2 ) undergoes a phase transition between an insulating monoclinic (M 1 ) phase and a conducting rutile phase. Like other correlated electron systems, the properties of VO 2 can be extremely sensitive to small changes in external parameters such as strain. In this work, we investigate a compressively strained VO 2 film grown on [001] quartz substrate in which the phase transition temperature (T c ) has been depressed to 325K from the bulk value of 340K. Infrared and optical spectroscopy reveals that the lattice dynamics of this strained film are very similar to unstrained VO 2 . However, some of the electronic inter-band transitions of the strained VO 2 film are significantly shifted in energy from those in unstrained VO 2 . That the lattice dynamics remain largely unchanged, while the T c and some of the electronic inter-band transitions differ substantially from the bulk values highlight the role of electronic correlations in driving this metal-insulator phase transition.

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Strain dependence of bonding and hybridization across the metal-insulator transition of VO2

Cited by 33 publications

References 28 publications

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

THz spectroscopy of VO₂epitaxial films: controlling the anisotropic properties through strain engineering

Modification of electronic structure in compressively strained vanadium dioxide films

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Strain dependence of bonding and hybridization across the metal-insulator transition of VO2

Cited by 33 publications

References 28 publications

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

THz spectroscopy of VO2epitaxial films: controlling the anisotropic properties through strain engineering

Modification of electronic structure in compressively strained vanadium dioxide films

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Product

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THz spectroscopy of VO₂epitaxial films: controlling the anisotropic properties through strain engineering