The absorption and emission of light
in single-layer transition
metal dichalcogenides are governed by the formation of excitonic quasiparticles.
Strain provides a powerful technique to tune the optoelectronic properties
of two-dimensional materials and thus to adjust their exciton energies.
The effects of large compressive strain in the optical spectrum of
two-dimensional (2D) semiconductors remain rather unexplored compared
to those of tensile strain, mainly due to experimental constraints.
Here, we induced large, uniform, biaxial compressive strain (∼1.2%)
by cooling, down to 10 K, single-layer WS
2
, MoS
2
, WSe
2
, and MoSe
2
deposited on polycarbonate
substrates. We observed a significant strain-induced modulation of
neutral exciton energies, with blue shifts up to 160 meV, larger than
in any previous experiments. Our results indicate a remarkably efficient
transfer of compressive strain, demonstrated by gauge factor values
exceeding previous results and approaching theoretical expectations.
At low temperatures, we investigated the effect of compressive strain
on the resonances associated with the formation of charged excitons.
In WS
2
, a notable reduction of gauge factors for charged
compared to neutral excitons suggests an increase in their binding
energy, which likely results from the effects of strain added to the
influence of the polymeric substrate.