Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy

Abstract

The lattice vibration model is established to express the crystalline silicon strain, based on which the strain coefficient b of −336.6 cm −1 is obtained for the uniaxial strain silicon with (100) crystalline plane. Applying Raman spectroscopy to measure single-axis crystalline silicon, the relationship between the screw rotation amount and the strain is advanced. By using a laser with a 648 nm wavelength, the Raman spectra frequency shift of 0.47 cm −1 is measured when the screw rotation amount is 1.5 mm. The strain coefficient b of −335.7 cm −1 , obtained for the (100) uniaxial strain silicon, agrees with the result of the lattice vibration model. CitationDuan B X, Yang Y T. Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy.