Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

Abstract

Strain-induced aggregate state instability in organic semiconductor (OSC) films is a critical and bottleneck issue in the practicalization process of organic field-effect transistors (OFETs), but this issue lacks deep insight and effective solutions for a long time. Herein, we developed a novel and general strain balance strategy for stabilizing the aggregate state of OSC films and enhancing the robustness of OFETs. The charge transport zone in OSC films located at the OSC/dielectric interface always suffers from the intrinsic tensile strain induced by substrates and tends to dewet. By introducing a compressive strain layer, the tensile strain can be well balanced and OSC films attain a highly stable aggregate state. Consequently, the OFETs based on strain-balanced OSC heterojunction films exhibit excellent operational and storage stability. This work provides an effective and general strategy to stabilize OSC films and gives guidance in constructing highly stable organic heterojunction devices.

Strain-Induced Electrical Hysteresis of Organic Thin-Film Transistors in Wrinkled Conjugated Polymers

“…Strain represents the deformation or elongation experienced by a material when subjected to external forces. In particular, with the growing demand for flexible and stretchable electronic devices, such as wearable sensors, smart textiles, and biomedical implants, the long-term stability of these devices became a crucial aspect. − Therefore, it is crucial to understand the intricate interplay between electrical stability and strain when designing robust and durable materials as well as devices capable of withstanding mechanical stress without losing their electrical performance. , However, while previous research efforts have primarily concentrated on enhancing device performance and refining fabrication processes, ,− the focus of recent studies has shifted toward investigating the electrical stabilities of devices. − …”