Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation

Jasik, A.; Sankowska, Iwona; Czuba, Krzysztof; Ratajczak, J.; Kozłowski, Paweł; Wawro, A.; Żak, D.; Piskorski, K.

doi:10.1016/j.infrared.2022.104109

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…InAs/GaSb SLs are more explored than InAs/InAsSb in terms of their physical properties, but it has been reported that introducing gallium atoms to the structure lowers the structural quality of the material through native point defects and has a negative impact on working parameters of the device 25 . To balance the gallium-induced defects it is crucial to maintain a balanced strain throughout the whole growth process to avoid "relieving" the strain by the SL through formation of the defects 26 . There are several methods of strain control in InAs/GaSb SLs, with two of them regarded in this work -"soaking" 27,28 and insertion of an InSb ML in between material pairs 29,30 .…”

Section: Introductionmentioning

confidence: 99%

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Rygala,

Bader,

Smolka

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

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Modern optical gas detection systems utilize the technique of tunable laser absorption spectroscopy for different applications in science, manufacture, or medicine. Superlattice structures composed of semiconductors from the 6.1 Å family enable type-II band alignments and have the potential to exceed state of the art figure of merits of widely used infrared detectors. In this study, InAs/GaSb and InAs/InAsSb type-II superlattices were grown using molecular beam epitaxy and characterized using Fourier-transform infrared spectroscopy and pump-probe transient absorption technique. Photoluminescence spectra were obtained for all samples in 10 to 300K temperature range and then complemented with photoreflectance measurements for characteristic temperatures to increase the sensitivity of the measurement for less optically active transitions. In addition, pump-probe measurements were performed to investigate the dynamics of carrier relaxation and recombination processes in proximity of transition energies observed in previous experiments.

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Section: Introductionmentioning

confidence: 99%

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Rygala,

Bader,

Smolka

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

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“…[8,9] Since 2000, InAs/GaSb T2SL photodetectors have made a significant breakthrough due to their intrinsic advantages, including structural stability [10][11][12] and a broad wavelength spectrum ranging from the mid-wave infrared (MWIR) to the very longwave infrared (VLWIR) regime. [13][14][15] The adjustable band alignment and the spatial separation of electrons and holes in the T2SL can reduce the Auger recombination rate by eliminating non-radiative pathways between valence bands [16][17][18] and enabling high operating temperature (HOT) device operation.…”

Section: Introductionmentioning

confidence: 99%

Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Liu¹,

Zhu²,

Zheng³

et al. 2022

Chinese Phys. B

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We systematically investigate the influence of InSb interface (IF) engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-II superlattices (T2SLs). The type II superlattice structure is 120 periods InAs (8 ML)/GaSb (6 ML) with different thicknesses of InSb interface grown by molecular beam epitaxy (MBE). The high-resolution X-ray diffraction (XRD) curves display the sharp satellite peaks, and the narrow full width at half maximum (FWHM) of the 0th are only 30-39 arcsecends. From the high-resolution cross-sectional transmission electron microscopy (HRTEM) characterization, the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively distinguished. As the InSb interface thickness increases, the compressive strain increases, and the surface "bright spots" appear to be more apparent from Atomic force microscopy (AFM) results. Also, photoluminescence (PL) measurements verifies that with the increase of the strain, the bandgap of the superlattice narrows. By optimizing the InSb interface, a high quality crystal with a well-defined surface and interface is obtained, with a PL wavelength of 4.78 um, which can be used for mid-wave infrared (MWIR) detection.

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Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices

Jasik,

Sankowska,

Kaźmierczak

et al. 2024

Surfaces and Interfaces

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Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation

Cited by 4 publications

References 27 publications

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Ultrafast infrared spectroscopy of InAs/GaSb and InAs/InAsSb type-II superlattices

Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices

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