Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

Stangl, J.; Daniel, A.; Holý, V.; Роч, Т.; Bauer, G.; Kegel, I.; Metzger, T. H.; Wiebach, Th.; Schmidt, Oliver G.; Eberl, K.

doi:10.1063/1.1392975

Cited by 61 publications

(45 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Qualitatively similar experimental results (exhibiting highly alloyed nanostructures, especially in the lower and central parts of the islands) have been also obtained by other authors using different experimental techniques [50,[52][53][54][55][56][57][58].…”

Section: Experimental Results Reporting Si-rich Coressupporting

confidence: 74%

Alloying of self-organized semiconductor 3D islands

Ratto

Costantini

Rastelli

et al. 2006

Journal of Experimental Nanoscience

View full text Add to dashboard Cite

We present a short review of alloying in uncapped self-organized semiconductor heteronanostructures. Our aim is to provide a logical guide through the main concepts proposed in recent scientific debates. In particular, we focus on the issue of mapping the chemical composition within individual germanium quantum dots grown on silicon surfaces, a widely studied model system with high technological potential. We discuss the different experimental results reported so far in the literature, along with the main theories suggested for their rationalization. In particular, we expand on the interplay of competing factors, including thermodynamic considerations, strain relaxation and kinetic limitations. Finally, we propose a possible pathway towards a unifying picture, with the intention to motivate further research on this topic.

show abstract

Section: Experimental Results Reporting Si-rich Coressupporting

confidence: 74%

Alloying of self-organized semiconductor 3D islands

Ratto

Costantini

Rastelli

et al. 2006

Journal of Experimental Nanoscience

View full text Add to dashboard Cite

show abstract

“…X-ray reciprocal space mapping has already been used to study self-assembled islands, mainly using strain models to reproduce the intensity maps [4,5]. Here grazing incidence diffraction was used in combination with x-ray reciprocal space mapping to infer the three-dimensional strain and chemical status of InGaAs islands.…”

Section: Ga Interdiffusion Inside Inas Dotsmentioning

confidence: 99%

X-ray scattering from self-assembled InAs islands

Malachias¹,

Neves²,

Rodrigues³

et al. 2004

Braz. J. Phys.

Self Cite

View full text Add to dashboard Cite

In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001) are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction under grazing incidence condition was employed to differentiate coherent and incoherent islands. We used a model of a strained pyramidal island to interpret the x-ray results and correlate size and strain-state of these islands. The degree of GaAs interdiffusion in the islands was inferred from the variation of volume of the unit cell. The Poisson's ratio of the two materials involved establishes a limit of tetragonal distortion for this material. Any variation in this distortion is associated with the presence of Ga inside the islands.

show abstract

“…However, the SiGe nanoclusters formed from this method need to be characterized for device applications. Different characterization techniques have been used in order to determinate the nanoisland parameters as composition, strain and growth dynamic [13][14][15]. The most popular characterization techniques used to this goal are x-ray, Raman and Atomic Force Microscopy (AFM).…”

Section: Introductionmentioning

confidence: 99%

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Anjos

Dói

Diniz

2009

e-J. Surf. Sci. Nanotechnol.

View full text Add to dashboard Cite

This work presents the micro-Raman (µR) analysis in SiGe nanoclusters formed by rapid thermal annealing (RTA). Heterostructure of a-Si:H/Ge/a-Si:H was grown on p-Si (001) substrate by Electron Cyclotron Resonance ECR plasma deposition and e-beam technique. Different parts of the sample were heated at 1000• C during 40, 50, 60 and 70 seconds. The samples as-deposited and RTA processed were characterized by Raman measurements in order to evaluate the Ge concentration and strain for different annealing times. The same parameters were extracted from high-resolution x-ray diffraction (HRXRD) performed in grazing incidence x-ray reflection mode (GIXRR). The µR spectra were sensitive to film strain changes due to the Ge diffusion during RTA process. The association of both characterization techniques provides information about some features of the SiGe nanoclusters at different annealing times. The results show the potential micro-Raman applicability for SiGe nanoclusters embedded in amorphous structure characterization.

show abstract

Strain and composition distribution in uncapped SiGe islands from x-ray diffraction

Cited by 61 publications

References 15 publications

Alloying of self-organized semiconductor 3D islands

Alloying of self-organized semiconductor 3D islands

X-ray scattering from self-assembled InAs islands

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Contact Info

Product

Resources

About