Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Lulli, G.; Albertazzi, E.; Bianconi, M.; Nipoti, Roberta; Cervera, M.; Carnera, A.; Cellini, C.

doi:10.1063/1.366498

Cited by 39 publications

(24 citation statements)

References 38 publications

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“…4. Damage distribution simulation obtained by KING [13] representing Ge ions implanted through a 115nm wide aperture for energies varying between 30keV and 90keV. The completely amorphous region is shown as the area containing a value of displaced atoms between 80% and 90% with respect to the silicon atomic density.…”

Section: Ion Implantation Conditionsmentioning

confidence: 99%

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Germanium implanted Bragg gratings in silicon on insulator waveguides

et al. 2010

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Integrated Bragg gratings are an interesting candidate for waveguide coupling, telecommunication applications, and for the fabrication of integrated photonic sensors. These devices have a high potential for optical integration and are compatible with CMOS processing techniques if compared to their optical fibre counterpart. In this work we present design, fabrication, and testing of Germanium ion implanted Bragg gratings in silicon on insulator (SOI). A periodic refractive index modulation is produced in a 1μm wide SOI rib waveguide by implanting Germanium ions through an SiO 2 hardmask.The implantation conditions have been analysed by 3D ion implantation modelling and the induced refractive index change has been investigated on implanted samples by Rutherford Backscattering Spectroscopy (RBS) and ellipsometry analysis.An extinction ratio of up to 30dB in transmission, around the 1.55μm wavelength, has been demonstrated for Germanium implanted gratings on SOI waveguides.

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Section: Ion Implantation Conditionsmentioning

confidence: 99%

“…Ion implantation for grating patterning has been modelled by the 3D version of the Monte-Carlo binary collision approximation (MC-BCA) program KING [13]. The ion implantation induced refractive index change in silicon has been investigated by ellipsometry analysis paired with Rutherford backscattering (RBS) spectroscopy.…”

Section: Ion Implantation Conditionsmentioning

confidence: 99%

Germanium implanted Bragg gratings in silicon on insulator waveguides

et al. 2010

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“…To test this hypothesis, we estimate the dose of excess interstitials implanted in the residual crystalline portion of the Si overlayer as a function of PAI energy, using the kinetic Monte Carlo implant simulator, KING. 12 The excess interstitial distributions for the as-implanted SOI samples were integrated between the amorphous/ crystalline interface and the BOX interface to give the dose of excess interstitials remaining within the overlayer after amorphization. The same calculation for bulk silicon, where the BOX is absent, gave a correspondingly larger dose of excess interstitials.…”

mentioning

confidence: 99%

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Hamilton

Kirkby

Cowern

et al. 2007

Applied Physics Letters

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Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/ crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2778749͔Highly activated ultrashallow boxlike doping profiles are an important requirement for advanced planar complementary metal oxide semiconductor ͑MOS͒ applications. 1 A promising fabrication approach for p-channel MOS transistors is the use of Ge preamorphizing implants ͑PAIs͒ prior to ultralow energy B implantation. This reduces channeling and increases electrical activation due to solid-phase epitaxial regrowth ͑SPER͒. 2 For future technology nodes, bulk Si wafers may be replaced by silicon on insulator ͑SOI͒. 3 Unfortunately, in both bulk Si and SOI, the PAI implantation step causes an interstitial-rich "end-of-range" ͑EOR͒ defect band to form on further annealing. As this EOR band evolves, it releases self-interstitials, causing transient enhanced diffusion ͑TED͒ and boron-interstitial cluster ͑BIC͒ formation which manifests itself as electrical deactivation. 4 In SOI, a proportion of the emitted self-interstitials may migrate to nearby sinks such as the silicon/buried oxide ͑BOX͒ interface, thus reducing the amount of B deactivation that occurs. 5 This letter quantifies the role of the BOX and shows the dramatic advantages-in terms of reduced diffusion and deactivation-that can be achieved by exploiting the positioning of the EOR defect band within the silicon top layer in SOI. We will show that two distinct physical processes are involved: the removal of interstitials at the BOX interface following diffusion within the Si overlayer and the cutting off of the "as-implanted" excess interstitial profile within the BOX.Experiments were performed on n-type ͗100͘ Czochralski Si wafers with a resistivity of ϳ10-25 ⍀ cm, and on SOITEC© SOI wafers with a nominal 145 nm BOX and a 55 nm p-type Si overlayer. The wafers were implanted with Ge + at 8, 20, 24, 28, 32, or 36 keV to a dose of 1 ϫ 10 15 cm −2 , amorphizing to depths of ϳ20, 40, 45, 50, 55, and 60 nm, respectively, as determined by Rutherford backscattering spectrometry ͑RBS͒ and cross-sectional transmission electron microscopy ͑XTEM͒. Boron was subsequently implanted at 500 eV to a dose of 2 ϫ 10 15 cm −2 at 0°tilt and 0°twist. RBS used a 1.5 MeV He beam at 45°to the sample. 6 After implantation, samples received isochronal rapid thermal annealings in N 2 ambient, using a Process Products Corporation 18-lamp system ͑with lamps above and below the sample͒ operating with a set time of 60 s at temperatures in the range of 700-1000°C, considere...

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“…3. King (2D) and King 3D use a Monte-Carlo Binary Collision approximation method for simulation, which does not account for dynamic annealing and the transport of defects [31], hence the simulation must be considered to be most accurate for low temperatures (77K). The simulation highlights large interface regions of lattice disorder, which are neither fully amorphous nor crystalline.…”

Section: Amorphization Conditionsmentioning

confidence: 99%

Planar surface implanted diffractive grating couplers in SOI

Topley¹,

О’Faolain²,

Thomson³

et al. 2014

Opt. Express

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Grating couplers are used to efficiently couple light from an optical fibre to a silicon waveguide as they allow light to be coupled into or out from any location on the device without the need for cleaving. However, using the typical surface relief grating fabrication method reduces surface planarity and hence makes further processing more difficult. The ability to manufacture high quality material layers on top of a grating coupler allows multiple active optical layers to be realized for multi-layer integrated optical circuits, and may enable monolithic integration of optical and electronic circuits on separate layers. Furthermore, the nature of the refractive index change may enable removal via rapid thermal annealing for wafer scale testing applications. We demonstrate for the first time a coupling device utilising a refractive index change introduced by lattice disorder. Simulations show 44% of the power can be extracted from the waveguide by using uniform implanted gratings, which is not dissimilar to the performance of typical uniform surface relief gratings currently used. Losses determined empirically, of 5.5dB per coupler have been demonstrated. 5958-5964 (1997). 32. G. F. Cembali, P. G. Merli, and F. Zignani, "Self-annealing of ion-implanted silicon: First experimental results," Appl. Phys. Lett. 38(10), 808-810 (1981 75-77 (2008).

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Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Cited by 39 publications

References 38 publications

Germanium implanted Bragg gratings in silicon on insulator waveguides

Germanium implanted Bragg gratings in silicon on insulator waveguides

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Planar surface implanted diffractive grating couplers in SOI

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