Stoichiometry of the diamond/silicon interface and its influence on the silicon content of diamond films

Abstract

Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating AIP Advances 2, 012147 (2012) Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects J. Appl. Phys. 111, 033507 (2012) Direct patterning of functional interfaces in oxide heterostructures Appl. Phys. Lett. 100, 041601 (2012) Evolution of nanoscale roughness in Cu/SiO2 and Cu/Ta interfaces Appl. Phys. Lett. 100, 024106 (2012) Additional information on J. Appl. Phys. Thin films of diamond were grown by microwave plasma chemical vapor deposition at growth pressures of 10, 20, 40, and 60 Torr keeping the substrate temperature constant at 975°C. Increase in the growth pressure reduced the size of the plasma ball resulting in an increase in the microwave power density ͑MPD͒. The films were characterized by scanning electron microscopy, micro-Raman, and photoluminescence ͑PL͒ spectroscopy. A systematic variation was observed in surface morphology and quality of the films. The intensity of the peak at 1.68 eV in the PL spectra of the films, which is assigned to Si impurities was also observed to increase consistently with the MPD. The stoichiometry of the diamond/silicon interface was studied by x-ray photoelectron spectroscopy ͑XPS͒ and found to be a sensitive function of the MPD. XPS results showed the formation of nonstoichiometric SiC along with other carbon phases in the initial stages of the growth. A correlation was observed between the composition of the interface and the intensity of the 1.68 eV peak. The above results are explained in terms of the increase in the impingement flux density of atomic hydrogen with the MPD.