Stoichiometric effects in polycrystalline CdTe

Khan, Mohammad Nasim Imtiaz; Evani, V.; Collins, S.; Palekis, Vasilios; Bane, P.; Bakhshi, Sara; Kendre, V.; Vatavu, Sergiu; Morel, D.L.; Ferekides, C.S.

doi:10.1109/pvsc.2014.6925397

Cited by 5 publications

(2 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16,36−39 For pure CdTe, the defects are highly dependent on the deposition method and the degree of crystallinity, as well as the stoichiometry. 40,41 One can expect similar behavior here, with the understanding that the introduction of a graded CST layer introduces further polydispersity in the possible defects and a shifting of the emission to lower energy. From the position of the peak in the room-temperature data (Figure 4), the band gap of the emitting slab in the graded front interface region of the 120 nm CdSe device can be estimated to be ∼1.44 eV, which corresponds to x = 0.20 in the CST layer.…”

Section: ■ Results and Discussionsupporting

confidence: 67%

“…The emission spectrum from the as-deposited CdSe/CdTe stack showed a weak, broad emission spanning from 1.0 to 1.5 eV (Figure S7a), consistent with the highly defective material. Weak defect-related emission has been reported on extensively for pure CdTe and is evidently present in these samples, as well. ,− For pure CdTe, the defects are highly dependent on the deposition method and the degree of crystallinity, as well as the stoichiometry. , One can expect similar behavior here, with the understanding that the introduction of a graded CST layer introduces further polydispersity in the possible defects and a shifting of the emission to lower energy. From the position of the peak in the room-temperature data (Figure ), the band gap of the emitting slab in the graded front interface region of the 120 nm CdSe device can be estimated to be ∼1.44 eV, which corresponds to x = 0.20 in the CST layer …”

Section: Results and Discussionsupporting

confidence: 62%

See 1 more Smart Citation

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Jamarkattel

Mathew

Phillips

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and V oc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSe x Te1–x layer.

show abstract

Section: ■ Results and Discussionsupporting

confidence: 67%