2020
DOI: 10.1103/physrevb.102.075117
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Stoichiometric and off-stoichiometric full Heusler Fe2V1xWxAl thermoelectric systems

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Cited by 21 publications
(28 citation statements)
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“…16,17 Considering the temperature-dependent electrical resistivity r(T) obtained on a variety of Fe 2 VAl samples, a distinct nonmetallic behaviour is derived, with room temperature values around 700 mO cm. 7,12,14,16 The absolute resistivity value coincides reasonably well with the small charge carrier density. Furthermore, the decrease of r(T) with increasing temperature reminds of a semiconductor-like electronic structure.…”
Section: Introductionsupporting
confidence: 68%
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“…16,17 Considering the temperature-dependent electrical resistivity r(T) obtained on a variety of Fe 2 VAl samples, a distinct nonmetallic behaviour is derived, with room temperature values around 700 mO cm. 7,12,14,16 The absolute resistivity value coincides reasonably well with the small charge carrier density. Furthermore, the decrease of r(T) with increasing temperature reminds of a semiconductor-like electronic structure.…”
Section: Introductionsupporting
confidence: 68%
“…In addition, studies on the Hall effect also evidence holes as primary charge carriers with a carrier density of about 4 to 4.8 Â 10 20 cm À3 around room temperature. 2,7,14 These values corroborate the small but finite electronic density of states at the Fermi energy.…”
Section: Introductionsupporting
confidence: 68%
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