Stochastic resonance in MoS2 photodetector

Dodda, Akhil; Oberoi, Aaryan; Sebastian, Amritanand; Choudhury, Tanushree H.; Redwing, Joan M.; Das, Saptarshi

doi:10.1038/s41467-020-18195-0

Cited by 95 publications

(85 citation statements)

References 54 publications

(64 reference statements)

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“…In this regard, extensive efforts have been devoted to explore suitable materials for next‐generation photodetectors in the past decades. [ 7–10 ] Since the discovery of graphene by Geim et al, [ 11 ] the family of 2D materials has drawn great attention for their favorable applications in modern electronic and optoelectronic devices. [ 12–17 ] In general, 2D materials possess unique and unconventional properties such as strong light–matter interaction, tunable optical absorption, and outstanding carrier transport and thus, are expected to be one of the most potential substitute materials to compensate the limitation of traditional semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

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The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to boost the overall photoelectric performance of photodetectors. In particular, the alignment of band structure at the interface of the binding materials plays a critical role in optimizing the carrier transfer path and prompting the charge separation rate, which finally lead to the simultaneous improvement of photoresponsivity and response rate and the expansion of detection range. However, the band alignment engineering topic has been barely summarized and reviewed in detail up to today. Herein, a specific review focused on the band alignment strategies and the related charge‐transfer mechanism of the recently developed novel TMD heterostructures for photodetectors is provided. The band structures are classified into four categories according to the targeted function of photodetectors, including that formed by TMDs with zero‐bandgap materials, narrow‐bandgap semiconductors, middle‐bandgap semiconductors, and wide‐bandgap semiconductors. The corresponding band alignment principles and charge‐transfer behaviors are summarized carefully by providing various latest research works as representative examples under each category. Herein, a key reference for applying and extending the fundamental band alignment principles in the design and fabrication of future TMD‐based heterostructural photodetectors is provided.

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Section: Introductionmentioning

confidence: 99%

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

et al. 2020

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“…Recently, a microprocessor based on MoS 2 FETs was reported 13 . Additionally, 2D FETs have found applications in various emerging technologies such as sensors for internet of things, neuromorphic computing, biomimetic devices, valleytronics, straintronics, and optoelectronic devices [14][15][16][17][18][19][20][21] . While initial demonstrations of prototype devices relied on exfoliated flakes, the 2D community has rapidly transitioned towards the growth of large-area films to address manufacturing needs for any commercial applications.…”

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confidence: 99%

Benchmarking monolayer MoS2 and WS2 field-effect transistors

et al. 2021

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Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm2 chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm2 V−1 s−1 in WS2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.

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“…Signal to noise ratio (SNR) and energy consumption are critical parameters for a photodetector. [44,45] SNR is defined as SNR = Signal power /Noise power and SNR of the fabricated device was found to be ≈143 dB and detailed calculation procedure is included in the Supporting Information. Further energy consumption of the fabricated photodetector was calculated to be ≈151 µJ.…”

Section: Resultsmentioning

confidence: 99%

MoS₂/Paper Decorated with Metal Nanoparticles (Au, Pt, and Pd) Based Plasmonic‐Enhanced Broadband (Visible‐NIR) Flexible Photodetectors

Selamneni

Raghavan

Hazra

et al. 2021

Adv Materials Inter

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development of flexible electronics, especially in the biomedical field, which has led to an exploration of flexible substrate photodetectors. [7,8] These devices are far more compact and cost-effective compared to the conventional bulk substrate devices and reduce the expenditure on material as well as fabrication. [9] Still, several issues need to be addressed. [10] Some of the issues are surface roughness, thermal stability, and cleanroom compatibility. Almost all of the flexible substrates utilized (polymers, paper, textile, etc.) have a rough surface which not only affects the charge carrier mobility but also increases the recombination rate. Further, the rise time is also affected which affects the gain of the photodetector. The second is thermal stability, that is, most of the flexible substrates cannot withstand high temperatures, and hence performing high-temperature processes is not possible which restricts limited fabrication methodologies. [11] Last, the flexible substrates are not cleanroom compatible and novel methodologies need to be developed for integrating novel functional nanomaterials onto the flexible substrates. Novel functional materials ranging from 0D to 2D, and hybrids (0D-1D, 0D-2D, and 1D-2D) based on these materials have been explored for this purpose. [12-15] Piezotronics is another means to improve the responsivity upon application of external strain which modulates the depletion region width and increases the electric field and thereby the responsivity. But the issue with piezotronics is that, the application of strain leads to permanent damage in the device, thereby decreasing the reliability of the photodetector. Localized surface plasmon resonance (LSPR) is another means of increasing the absorption, and hence the responsivity and speed, and is a widely researched domain for conventional rigid substrate devices with the decoration of noble nanoparticles (NPs). [16-19] However, reports on the use of metal NPs for high-performance flexible devices using LPSR are few. Moreover, the reports on the comparative performance of different NPs also remain limited. Hence, there is a need to explore Plasmonic enhancement in flexible substrate devices. Transition metal dichalcogenides (TMDs) are a popular class of 2D materials because of their outstanding optical and mechanical properties and tunable bandgap. [20] Of these, MoS 2 is of special interest due to its superior electrical properties, high Even though there are reports on flexible photodetectors, one of the main issues that still needs to be resolved is the lower values of responsivity arising due to the use of non-conventional substrates such as polymers, cellulose paper, etc. There are ways to improve the responsivity, such as piezotronics and surface plasmonic resonance, but studies on utilizing the same for flexible substrates remain limited. Further, the comparative performance of different nanoparticles (NPs) remains unexplored. This report demonstrates the fabrication of flexible visible/near-infrared (NIR) photodetectors by...

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Stochastic resonance in MoS2 photodetector

Cited by 95 publications

References 54 publications

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Benchmarking monolayer MoS2 and WS2 field-effect transistors

MoS₂/Paper Decorated with Metal Nanoparticles (Au, Pt, and Pd) Based Plasmonic‐Enhanced Broadband (Visible‐NIR) Flexible Photodetectors

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Stochastic resonance in MoS2 photodetector

Cited by 95 publications

References 54 publications

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Band Alignment Engineering in Two‐Dimensional Transition Metal Dichalcogenide‐Based Heterostructures for Photodetectors

Benchmarking monolayer MoS2 and WS2 field-effect transistors

MoS2/Paper Decorated with Metal Nanoparticles (Au, Pt, and Pd) Based Plasmonic‐Enhanced Broadband (Visible‐NIR) Flexible Photodetectors

Contact Info

Product

Resources

About

MoS₂/Paper Decorated with Metal Nanoparticles (Au, Pt, and Pd) Based Plasmonic‐Enhanced Broadband (Visible‐NIR) Flexible Photodetectors