1999
DOI: 10.1016/s0039-6028(99)00951-6
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STM atomic-scale characterization of the γ′-Al2O3 film on Ni3Al(111)

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Cited by 55 publications
(53 citation statements)
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“…At 900 and 1000°C, the k p values of both doped and undoped alloys tend to k p values where the formation of the θ-Al 2 O 3 phase may be possible in NiAl as reported by Brumm and Grabke [72]. At 1100°C, the k p values are concentrated at a point between the formation of θ-Al 2 O 3 and α-Al 2 O 3 ; an explanation for this behavior could be that, at this temperature, the stability of the α-Al 2 O 3 begins [18] and this tends to decrease the weight gain [70,71]. At 900°C and 1000°C, the k p value of the undoped alloy is similar to results reported by Lee and Kim [26] and Choi et al [73], and at 1100°C, it is similar to results of Kuenzly et al [74].…”
Section: Advances In Materials Science and Engineeringsupporting
confidence: 53%
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“…At 900 and 1000°C, the k p values of both doped and undoped alloys tend to k p values where the formation of the θ-Al 2 O 3 phase may be possible in NiAl as reported by Brumm and Grabke [72]. At 1100°C, the k p values are concentrated at a point between the formation of θ-Al 2 O 3 and α-Al 2 O 3 ; an explanation for this behavior could be that, at this temperature, the stability of the α-Al 2 O 3 begins [18] and this tends to decrease the weight gain [70,71]. At 900°C and 1000°C, the k p value of the undoped alloy is similar to results reported by Lee and Kim [26] and Choi et al [73], and at 1100°C, it is similar to results of Kuenzly et al [74].…”
Section: Advances In Materials Science and Engineeringsupporting
confidence: 53%
“…Al 2 O 3 forms internally due to inward diffusion of O 2− anions, while NiO is a p-type conductor, which preferably promotes conduction of cations [15][16][17]. Al 2 O 3 growth onto alloys such as Ni 3 Al can adopt different crystallographic arrangements: between 427 and 927°C, the γ-Al 2 O 3 phase is stable; until 1077°C, the θ-Al 2 O 3 phase is stable; and above 1077°C, the α-Al 2 O 3 phase is stable [18]. e θ → α transformation is accompanied by a change in the transport properties of the scale.…”
Section: Introductionmentioning
confidence: 99%
“…In all series, the thickness of the alumina layer increases rapidly after the first exposure to oxygen to reach 0.7-0.8 nm after less than 3 min of exposure, and levels off afterwards to reach 1.3-1.5 nm at the most. This range of thickness is typical for the alumina layers formed under UHV conditions on other aluminide alloys (NiAl) [16][17][18][19][20][21][22]. It amounts to oxide films consisting of 3-7 monolayers of oxide.…”
Section: Selective Oxidation Of Aluminiummentioning
confidence: 91%
“…One should note that one of the significant features of the TM aluminides is that they can serve as templates for the growth of well-ordered oxide layers [62][63][64][65][66]. Due to their importance in a broad range of applications, thin oxide layers and their surfaces have attracted considerable attention.…”
Section: General Review: Metal Thin Film Growth On Multimetallic Surfmentioning
confidence: 99%
“…Specifically, upon direct oxidation of clean alloy surfaces at high temperature, well-ordered thin alumina films have been identified on Ni 3 Al(111) [66], NiAl(111) [65], NiAl(001) [64], NiAl(110) [62,63] and FeAl(110) [61].…”
Section: General Review: Metal Thin Film Growth On Multimetallic Surfmentioning
confidence: 99%