Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Saito, Shinichi; Suwa, Yuji; Arimoto, Hideo; Sakuma, Noriyuki; Hisamoto, D.; Uchiyama, Hiroyuki; Yamamoto, Jiro; Sakamizu, Toshio; Mine, T.; Kimura, S.; Sugawara, Toshiki; Aoki, Masaki

doi:10.1063/1.3273367

Cited by 42 publications

(36 citation statements)

References 25 publications

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“…Nevertheless, Si has been the subject of extensive research for use in fabricating lasers since it shows excellent compatibility with electronic devices [1]. For example, there are reports in the literature on Raman lasers [2] and lasers utilizing quantum size effects [3]; however, parameters such as the operating temperature, efficiency, wavelength and so forth are still not adequate for practical adoption of these devices.…”

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confidence: 99%

Si homojunction structured near-infrared laser based on a phonon-assisted process

et al. 2012

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We fabricated several near-infrared Si laser devices (wavelength ∼1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 µm and a thickness of 2 µm, with two cleaved facets, and the resonator lengths were 250-1000 µm. The oscillation threshold currents of these Si lasers were 50-60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1-2.0 kA/cm 2 , 8:1, 50 µW, and 1 %, respectively.Because silicon (Si) is an indirect-transition-type semiconductor, it is difficult to use it as a material for optical devices To solve these problems, in the research described here, we developed a Si laser showing continuous-wave operation at room temperature. To do so, we applied the same fabrication method and operating principle used for a Si-LED that we previously developed, which used a Si crystal having a p-n homojunction [4]. We report the results here.Similar to the fabrication of Si LEDs that we have already reported, in this work, first we formed a p-n homojunction by introducing a p dopant into an n-type Si substrate by ion implantation. Then, while irradiating the structure with light, we applied an electrical current to generate Joule heating, causing annealing. Stimulated emission was produced via a two-step transition process driven by the light irradiation. This process is described below [4,5].(i) First step: Dressed photons are generated by the light irradiation in regions where the dopant concentration in the p-n junction has a non-uniform spatial distribution. A dressed photon is a quasi-particle representing a coupled state due to the mutual interaction between a photon and an electron on the nanometer scale. The dressed photon then couples with a multi-mode phonon, generating stimulated emission that causes a conduction-band electron to transition from an initial state |E ex ; el ⊗ |E ex thermal ; phonon to an intermediate state |E g ; el ⊗ |E ex ; phonon . Here, |E ex ; el and |E g ; el respectively represent the excited state (conduction band) and ground state (valence band) of the

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Si homojunction structured near-infrared laser based on a phonon-assisted process

et al. 2012

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“…For thin enough barriers such transport via hole tunneling has been observed (74,75), visible LEDs have been demonstrated (50)(51)(52)(53)76,77) and, remarkably, a silicon light-emitting transistor for on-chip optical interconnection has been produced (78). Following a theoretical prediction of a large optical gain in ultra thin silicon quantum wells (79), Saito et al (80) have recently observed optical gain and stimulated emission by current injection into an ultra thin layer of silicon embedded in a resonant optical cavity. Thus the production of a laser based on such structures is now a real possibility.…”

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confidence: 99%

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

Lockwood

2011

ECS Trans.

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In opto-electronics and photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Amongst a number of diverse approaches to engineering efficient light emission in silicon nanostructures, one system that has received considerable attention has been Si/SiO 2 quantum wells. Engineering such structures has not been easy, because to observe the desired quantum confinement effects, the quantum well thickness has to be less than 5 nm. Nevertheless, such ultra thin structures have now been produced by a variety of techniques. The SiO 2 layers are amorphous, but the silicon layers can range from amorphous through nanocrystalline to single-crystal form. The fundamental band gap of the quantum wells has been measured primarily by optical techniques and strong confinement effects have been observed. A number of theories based primarily on ab initio approaches have been developed to explain these results with varying degrees of success. A detailed comparison is made between theoretical and experimental determinations of the band gap in Si/SiO 2 quantum wells.

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“…Their optical absorption characteristics are ideal for optical pumping in a planar microcavity and their electrical characteristics are amenable to injection laser design. With the recent observation of stimulated emission by Saito et al (125), this system holds the most promise at present for room temperature laser action. Quantum dot LEDs made from Si/Si 1-x Ge x (143,146) show considerable potential for laser applications at 1.3 and possibly 1.55 µm.…”

Section: Prospects For Silicon Based Optoelectronic Devicesmentioning

confidence: 99%

Bringing Silicon to Light: Luminescence in Silicon Nanostructures

Lockwood

2011

ECS Trans.

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The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics and, more recently, in photonics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects are assessed for applications in silicon-based photonics.

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Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Cited by 42 publications

References 25 publications

Si homojunction structured near-infrared laser based on a phonon-assisted process

Si homojunction structured near-infrared laser based on a phonon-assisted process

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells

Bringing Silicon to Light: Luminescence in Silicon Nanostructures

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Stimulated emission of near-infrared radiation by current injection into silicon (100) quantum well

Cited by 42 publications

References 25 publications

Si homojunction structured near-infrared laser based on a phonon-assisted process

Si homojunction structured near-infrared laser based on a phonon-assisted process

(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO2 Quantum Wells

Bringing Silicon to Light: Luminescence in Silicon Nanostructures

Contact Info

Product

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(Luminescence and Display Materials Division Centennial Outstanding Achievement Award) Band Gap Luminescence from Nanometer Thick Si/SiO₂ Quantum Wells