In-situ hermiticity detection using Titanium dioxide (TiO 2 ) thin film resistors has been investigated for the first time. Titanium dioxide is widely used as an oxygen sensor, with accurate partial pressure reading at high temperatures. In addition to being oxygen sensitive at room temperature, TiO 2 thin film resistors were found to be excellent pressure gauges at typical bonding pressures in the range of 1 Torr to 760 Torr. Combining the pressure sensitivity with the oxygen selectivity, Titanium dioxide thin film resistors constitute perfect hermiticity solutions for MEMS devices capped in an oxygen deficient environment at sub-atmospheric pressures. This unprecedented demonstration opens up new opportunities for monitoring real-time hermiticity in packaged MEMS devices, understanding the various failure modes during operation, and implementing the necessary diagnostic solutions.