Sticking probability and adsorption process of NH3 on Si(100) surface

Mechanisms for NH3 Decomposition on Si(100)–(2×1) Surface: A Quantum Chemical Cluster Model Study

“…We calculated that TS1 is 7.4 kcal mol −1 below R1. The corresponding experimental value was estimated to be around 4 kcal mol −1 38…”

“…The corresponding experimental value was estimated to be around 4 kcal mol À1 . [38] The molecular precursor LM1 (NH 3 ¥¥¥ Si1ÀSi1:) is characterized by a long Si1 ¥¥¥ NH 3 dative bond of 2.014 ä. The Si1 À NH 2 bond in LM2 (NH 2 -Si1-Si1-H) is a covalent bond.…”

Low-temperature CVD of η-Mn3N2−x from bis[di(tert-butyl)amido]manganese(II) and ammonia

“…44,45 While ammonia dissociates on bare Si(100) surfaces and thus has a high sticking coefficient (for example, it is 0.9 at 80 C and 0.5 at 300 C), as the surface coverage of adsorbates approaches unity this coefficient drops to less than 0.1 at all temperatures. 46 On the Si(100)-H surfaces used in our experiments, ammonia does not dissociate and thus does not adsorb strongly. 47 Although we did not carry out any experiments on SiO 2 , it is known that ammonia can suppress CVD growth on this surface despite the fact that ammonia adsorbs only weakly.…”

Adsorption dynamics of tetrahydrofuran on Si(0 0 1) studied by means of molecular beam techniques

“…Furthermore, the functional form of the decreasing signal strongly resembles the increasing signal after the beam is allowed to enter the main chamber. As a consequence, the measured QMS-signal is interpreted as a superposition of the pressure change induced by the reaction of THF molecules on the silicon surface and the rather slow chamber response function f c [25], tentatively assigned to adsorption/desorption phenomena at chamber walls (including the cooled manipulator): when the beam enters the main chamber, molecules reflected from the shutter can stick at the chamber walls leading to a retarded increase of the QMS signal. On the other hand, when the beam hits the reactive sample and most of the molecules in the beam are adsorbed on the surface, desorption from the chamber walls can cause the retarded decrease of the QMS signal.…”