STI process steps for sub-quarter micron CMOS

Sallagoity, P.; Gaillard, F.; Rivoire, M.; Paoli, M.; Haond, M.; McClathie, S

doi:10.1016/s0026-2714(97)00166-2

Cited by 19 publications

(5 citation statements)

References 3 publications

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“…STI is created early during the semiconductor device fabrication process, before transistors are formed. The key steps of the STI process involve etching a pattern of trenches in the silicon, deposition of one or more dielectric materials (such as silicon dioxide) to fill the trenches, and removing the excess dielectric using a technique such as chemical-mechanical planarization [6]. Defects can be either inherently present in the bulk silicon or generated during some critical process steps like epitaxial growth, implantation, and the formation of shallow trench isolations [7][8].…”

Section: ) Traditional Screening Procedures For Stimentioning

confidence: 99%

In situ screening techniques for defective oxides in devices for automotive applications

Malandruccolo¹,

Ciappa²,

Fichtner³

et al. 2011

2011 International Reliability Physics Symposium

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Efficient screening procedures for the control of the defectivity are vital to limit early failures especially in critical automotive applications. Traditional strategies based on burn-in and in-line tests are able to provide the required level of reliability but they are expensive and time consuming. This paper presents novel built-in circuitries to screen out oxide defects in integrated circuits for the most important building blocks used in automotive applications. The proposed techniques are based on an embedded circuitry that includes control logic, high voltage generation, and leakage current monitoring. The concept and advantages of the proposed screening procedure are described in very detail and demonstrated experimentally in conjunction with the integration of test-chips.

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Section: ) Traditional Screening Procedures For Stimentioning

confidence: 99%

In situ screening techniques for defective oxides in devices for automotive applications

Malandruccolo¹,

Ciappa²,

Fichtner³

et al. 2011

2011 International Reliability Physics Symposium

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“…The increasing implementation of Chemical Mechanical Polishing (CMP) 2 in semiconductor manufacturing coupled with the limitations of the LOCOS technique has led to the acceptance of Shallow Trench Isolation (STI) as the technique of choice for device isolation 3,4 . The increasing implementation of Chemical Mechanical Polishing (CMP) 2 in semiconductor manufacturing coupled with the limitations of the LOCOS technique has led to the acceptance of Shallow Trench Isolation (STI) as the technique of choice for device isolation 3,4 .…”

Section: Neededmentioning

confidence: 99%

In-situ Metrology for End Point Detection during Chemical Mechanical Polishing of Shallow Trench Isolation Structure

et al. 2005

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Efficient end point detection (EPD) helps prevent numerous Chemical Mechanical Polishing (CMP) process defects such as dishing, erosion, excessive over-polish etc. During the CMP of Shallow Trench Isolation (STI) structures, the process should be effectively stopped at the buried Si 3 N 4 layer to prevent any/all of the aforementioned process defects. In this research, novel in-situ metrology technique that used the real time tracking of Coefficient of Friction (COF) data during polishing was employed for EPD during STI-CMP. The experiments were performed on the CETR CP-4 CMP Tester using 1"X 1" sample coupons having a 2 µ m pitch STI pattern. The COF signal during polishing is a characteristic signature of the given process parameters and conditions. The in-situ EPD was based on the principle that the COF values are strongly dependent upon the surface of the materials that are being polished. Extended polishing to polish the underlying layer after the process end point was reached, can give an estimate of the polishing slurry selectivity with respect to the buried layer. The ex-situ surface characterization of coupons was performed at different points of the process using Atomic Force Microscopy (AFM). The repeatability and reliability of this technique was evaluated after carrying out multiple tests at similar process conditions. The demonstrated methodology can also be implemented for characterization of polishing pads and slurries besides STI-CMP process optimization.

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“…11 A silicon wafer, shallow trench isolation (STI), an inter-layer dielectric (ILD) and the establishment of interconnects are all CMP processing areas. [12][13][14][15] CMP has recently expanded its applications to include microelectromechanical devices, printed circuit boards and more. [16][17][18][19][20] The CMP process removes material through chemical action including slurry chemicals and abrasives, along with mechanical abrasion.…”

Section: Introductionmentioning

confidence: 99%

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

Kumar

Singh

2021

Journal of Micromanufacturing

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Chemomechanical magnetorheological finishing (CMMRF) has emerged as a nanofinishing method that combines the characteristics of chemical mechanical polishing (CMP) and magneto-rheological finishing (MRF). The CMMRF process was designed to take into account both the chemical and mechanical effects that occur during the finishing process. In the field of material processing science, this article delves into the fundamentals of the CMMRF method. The potential research patterns linked to CMMRF are assessed and their benefits are determined. Furthermore, the challenges of improving CMMRF process capabilities, as well as the wide futuristic opportunities of the research sector, are emphasised, along with meeting all industrial needs. The findings of this analysis paper will also aid researchers in the field of advanced finishing in identifying process realisation for better results.

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STI process steps for sub-quarter micron CMOS

Cited by 19 publications

References 3 publications

In situ screening techniques for defective oxides in devices for automotive applications

In situ screening techniques for defective oxides in devices for automotive applications

In-situ Metrology for End Point Detection during Chemical Mechanical Polishing of Shallow Trench Isolation Structure

Chemomechanical magnetorheological finishing: Process mechanism, research trends, challenges and opportunities in surface finishing

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