Stereolithographically fabricated aluminum nitride microchannel substrates for integrated power electronics cooling

Jankowski, Nicholas R.; Everhart, L.; Geil, Bruce; Tipton, C.W.; Chaney, Jared; Heil, T.; Zimbeck, Walter

doi:10.1109/itherm.2008.4544269

Cited by 15 publications

(17 citation statements)

References 16 publications

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“…Recently, ARL has investigated several approaches to developing higher thermal conductivity attach layers (30,31) and moving the cooling mechanism closer to the devices. This has included cooling integrated into baseplates (32) and ceramic substrates (33,34) and even directly cooling the backside of the packaged devices (35). A number of other investigators have pursued alternative substrate (beryllium oxide [BeO] [36]) and composite heat sink materials (aluminumSiC (37), aluminum-carbon (38), etc.)…”

Section: Electronics Cooling -Technology Optionsmentioning

confidence: 99%

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

Odom¹,

Jankowski²,

Morgan³

2012

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

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Section: Electronics Cooling -Technology Optionsmentioning

confidence: 99%

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

Odom¹,

Jankowski²,

Morgan³

2012

Self Cite

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“…The copper DBC backside is bonded to a heat spreading base-plate, typically made of copper, then attached to a pin-finned heat sink by way of thermal interface material (TIM). Because each resistive layer in this design is a thermal handicap to heat dissipation, current high-performance power electronic device packages of this orientation can have resistivities in the range of 1-3 Kcm²/W or higher [1].…”

Section: Standard Thermal Stackmentioning

confidence: 99%

“…The TIM and pin-finned heat sink layer represent the bulk of the thermal obstruction, legitimizing attachment methods and heat sink advances as primary targets for past and present improvement [1]. Previous work, including efforts at the Army Research Laboratory, has investigated minimizing the number of layers in the stack to reduce overall thermal resistance.…”

Section: Standard Thermal Stackmentioning

confidence: 99%

“…Previous work, including efforts at the Army Research Laboratory, has investigated minimizing the number of layers in the stack to reduce overall thermal resistance. Specifically, direct brazing of the baseplate to the cold plate or building the cold plate from the baseplate can significantly reduce the effect of the TIM material and deliver total thermal stack resistivities ranging from 0.2-0.8 K-cm²/W [1,2]. …”

Section: Standard Thermal Stackmentioning

confidence: 99%

“…Specifically, thermal stack resistivities have been shown to be reduced from 1-3 Kcm²/W to 0.1-0.2 K-cm²/W [1,2]. These thermal benefits, however, are attenuated by increased fluid flow impedance and temperature non-uniformity along the parallelmicrochannel fluid cooling path [5,6].…”

Section: Microchannel Coolingmentioning

confidence: 99%

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Thermal performance of a Direct-Bond-Copper Aluminum Nitride manifold-microchannel cooler

Sharar

Jankowski

Morgan

2010

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)

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The presence of multiple thermally resistive layers in a standard power electronics package is a hindrance to thermal dissipation. By reducing the thermal stack and incorporating microchannel cold plates into the Aluminum Nitride substrate layer, significant improvement can be made. While parallel microchannel coolers have proved their faculty for single chip cooling, manifold microchannel coolers are explored for projected thermal and fluidic advantages for multi-chip modules aimed towards Hybrid Electric vehicles. This report outlines the fabrication, testing, and experimental results for a four-chip manifold microchannel cooler with water at 25°C and 80°C and three vehicular coolant fluids at 80°C with a maximum allowable pressure drop of 5 psig. Depending on the coolant fluid used, the total thermal stack resistivities ranged from 0.316-0.628 K-cm²/W at the 5psig pressure limit. Potential for future research and module improvement is briefly discussed.

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Laser‐Tuned Surface Wettability Modification and Incorporation of Aluminum Nitride (AlN) Ceramics in Thermal Management Devices

Mukhopadhyay,

Pal,

Sarkar

et al. 2024

Adv Funct Materials

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Aluminum nitride (AlN), a versatile ceramic with high thermal conductivity, high electrical resistivity, and a coefficient of thermal expansion compatible with silicon, is well‐suited for direct‐to‐chip cooling applications of electronics, implementation in wide bandgap semiconductors, and for high‐temperature heat exchangers. Despite multiple advantages, AlN's implementation in liquid‐cooling applications is often hindered by surface‐degrading effects of working‐fluid‐induced hydrolysis. Herein, a scalable ‐but highly tunable‐ wettability engineering approach is introduced, that allows effective implementation of bulk AlN substrates in enhanced two‐phase cooling of electronics. The approach prevents hydrolysis of AlN by aqueous media and establishes control over surface roughness, all the while maintaining bulk integrity and material properties of the underlying substrate. Demonstration of the new approach is presented in spontaneous, pumpless, surface liquid transport, a necessity if such ceramics are to play an integral role as components of sealed, phase‐change, wickless thermal‐management devices (e.g., vapor chambers or heat pipes) that require rapid working‐fluid transport in their multi‐phase interior. The novelty of this work lies in establishing a scalable methodology for utilizing and further enhancing the properties of this non‐oxide ceramic material for phase‐change heat‐transfer hermetic devices, thereby paving the way toward the implementation of this intriguing material in next‐generation heat spreaders.

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Stereolithographically fabricated aluminum nitride microchannel substrates for integrated power electronics cooling

Cited by 15 publications

References 16 publications

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

Thermal performance of a Direct-Bond-Copper Aluminum Nitride manifold-microchannel cooler

Laser‐Tuned Surface Wettability Modification and Incorporation of Aluminum Nitride (AlN) Ceramics in Thermal Management Devices

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