Step structures during MBE growth of GaAs and AlGaAs films on vicinal GaAs(110) surfaces inclined toward (111)B

Hasegawa, Shigehiko; Kimura, Kazuhiro; Sato, Masamichi; Maehashi, Kenzo; Nakashima, Hisao

doi:10.1016/0039-6028(92)91075-m

Cited by 17 publications

(2 citation statements)

References 3 publications

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“…AlGaAs/GaAs heterostructures have been studied extensively in the last 30 years, and there are many reports of aluminum inhomogeneity in planar heterostructures − and quantum wires . In addition, key studies have shown morphology variation and faceting due to variable growth rates on different atomic planes − making the growth of AlGaAs/GaAs quantum well heterostructures a challenge in both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) growth.…”

Section: Experimental Methodsmentioning

confidence: 99%

Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires

et al. 2013

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AlGaAs/GaAs quantum well heterostructures based on core-multishell nanowires exhibit excellent optical properties which are acutely sensitive to structure and morphology. We characterize these heterostructures and observe them to have 3-fold symmetry about the nanowire axis. Using aberration-corrected annular dark field scanning transmission electron microscopy (ADF-STEM), we measure directly the polarity of the crystal structure and correlate this with the shape and facet orientation of the GaAs core, quantum wells and cap, and the width of radial Al-rich bands. We discuss how the underlying polarity of the crystal structure drives the growth of these heterostructures with a 3-fold symmetry resulting in a nonuniform GaAs quantum well tube and AlGaAs shell. These observations suggest that the AlGaAs growth rate is faster along the ⟨112⟩ B compared to the ⟨112⟩ A directions and/or that there is a polarity driven surface reconstruction generating AlGaAs growth fronts inclined to the {110} planes. In contrast, the observations suggest that the opposite is true for the GaAs growth, with the preferred surface reconstruction plane being parallel to {110} and an apparent faster growth rate along the ⟨112⟩ A. This two-dimensional layer growth of the nanowire multishells strongly depends on the surface energies and surface reconstruction of the facets which are related to the crystal polarity and lead to the 3-fold symmetry observed here.

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Section: Experimental Methodsmentioning

confidence: 99%

Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires

et al. 2013

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“…Most authors agree that the necessary condition for the appearance of step-bunching is a mode of growth close to step flow but at lower temperatures [see e.g. Hiramoto 1994 or Hasegawa 1992].…”

Section: Step-bunchingmentioning

confidence: 99%

Surface morphology and defects InGaAs layers grown on vicinal substrates

Γιαννακόπουλος¹

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This thesis presents a study of InGaAs epitaxial layers grown on vicinal GaAs.In particular it investigates the surface morphology of such layers with the use of Atomic Force Microscopy, Nomarski Differential Interference Microscopy and the relation of this morphology to the misfit dislocation array on the interface. The I would like to thank my supervisor Peter J. Goodhew for his encouragement and support throughout this project. Also, Dr Robert Murray for his valued criticism of this manuscript and invaluable hours of discussion upon a variety of topics. I am also indebted to Dr Tim B. Joyce for the CBE growth of my samples and Guy Cohen (Technion, Israel Institute of Technology) for the DCXRD measurements The help of all those in the Department of Materials Science and Engineering and the CBE group of the University of Liverpool should also be acknowledged and especially Georgios Petkos and Dr Glyn Macpherson. I could not have had better financial support than that given by the European Commission under the Training and Mobility of Researchers Programme. I would also like to thank Pat Owen for her generous help from the first moment that I came to Liverpool and my friend Fedon Antonakopoulos for making my stay more enjoyable. The support of my colleagues, Dr Adam Boyd, Sue Sajip, and Muhammad Azmi Abdul Hamid has also been very important for the completion of this work. Finally, I am grateful to my family for supporting me throughout my studies."Strain Relaxation In III-V Semiconductor Heterostructures ", P. J. Goodhew and K.

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Quantum Wires on Vicinal GaAs (110) Surfaces

Nakashima¹

1998

Mesoscopic Physics and Electronics

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Step structures during MBE growth of GaAs and AlGaAs films on vicinal GaAs(110) surfaces inclined toward (111)B

Cited by 17 publications

References 3 publications

Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires

Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires

Surface morphology and defects InGaAs layers grown on vicinal substrates

Quantum Wires on Vicinal GaAs (110) Surfaces

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