Step edge cut off — A new fabrication process for metal-based single electron devices

Altmeyer, Stefan; Spangenberg, Bernd; Kühnel, F.; Kurz, H.

doi:10.1016/0167-9317(95)00272-3

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…When the “free electrons” in metals are given high kinetic energy, e.g., by heating or a high electric field, they can run out of the metal bulk into free space. Electron beam has been used widely in welding [13–16], melting [17], edge cutting-off [18], surface treatment [19, 20], and physical vapor deposition [21]. Nowadays, much recent progress in metal additive manufacturing processes using e-beam melting has been made [22–26].…”

Section: Introductionmentioning

confidence: 99%

Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

et al. 2019

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Electron beams (e-beams) have been applied as detecting probes and clean energy sources in many applications. In this work, we investigated several approaches for measurement and estimation of the range and distribution of local temperatures on a subject surface under irradiation of nano-microscale e-beams. We showed that a high-intensity e-beam with current density of 105-6 A/cm2 could result in vaporization of solid Si and Au materials in seconds, with a local surface temperature higher than 3000 K. With a lower beam intensity to 103-4 A/cm2, e-beams could introduce local surface temperature in the range of 1000–2000 K shortly, causing local melting in metallic nanowires and Cr, Pt, and Pd thin films, and phase transition in metallic Mg-B films. We demonstrated that thin film thermocouples on a freestanding Si3N4 window were capable of detecting peaked local surface temperatures up to 2000 K and stable, and temperatures in a lower range with a high precision. We discussed the distribution of surface temperatures under e-beams, thermal dissipation of thick substrate, and a small converting ratio from the high kinetic energy of e-beam to the surface heat. The results may offer some clues for novel applications of e-beams.

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Section: Introductionmentioning

confidence: 99%

Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

et al. 2019

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“…An alternative way to meet these challenges with standard electron-beam lithography (EBL) is the step edge cut-off (SECO) [10][11][12][13] fabrication scheme, which is also used by other groups [14]. The two possible variants of this process are sketched in figure 3.…”

Section: Fabrication: Technologymentioning

confidence: 99%

A possible road to 77 K single-electron devices

Altmeyer¹,

Kühnel²,

Spangenberg³

et al. 1996

Semicond. Sci. Technol.

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The application of single-electron devices is restricted to temperatures at which Coulomb blockade occurs. The most critical parameter of the devices is the tunnelling capacitance. Operation at liquid helium temperature, for example, requires tunnelling capacitances of the order of 20 aF. To realize such low capacitances, advanced electron-beam lithography below 20 nm is mandatory in fabrication schemes proposed up to now. Here we will present a new fabrication process that is capable of tunnelling capacitances as small as 1.5 aF with relaxed technological requirements at the same time. The detailed studies of Coulomb blockades at 20 K currently made may define the route to 77 K operation.

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“…Single-electron transport devices for future integrated circuits such as high-density memory and logic have attracted great interest. To realize device operation at high temperature, many attempts have been made to fabricate nanometer-scale Coulomb islands using Si/SiO 2 [1] and metal/insulator/metal (MIM) [2] systems. Many reports discuss miniature MIM structures fabrication techniques such as low-energy ion beam deposition [3] and multiangle metal lift-off process [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Miniature tunnel junction by electron-beam-induced deposition

Komuro¹,

Hiroshima²,

Takechi³

1998

Nanotechnology

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Electron-beam- (EB-) induced deposition using a precursor molecule was applied to making very thin metallic wires and metal/insulator/metal tunnel junctions for single-electron transport devices. Single wires, typically 8 nm thick and 13 nm wide, were produced on a substrate, using the primarily EB with 3 nm diameter. It was shown that oxygen plasma treatment of the substrate just before EB-induced deposition was effective to avoid hydrocarbon deposits which resulted in high-resistance films. A post-annealing procedure in gas ambient improved also the resistance of the wires up to three orders of magnitudes. A tunnel junction where three dots structure was connected to the wires was produced. Its electrical characteristics were fitted to a Fowler-Nordheim plot with a gradient which gradually increased when increasing the pitch of the dot array.

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Step edge cut off — A new fabrication process for metal-based single electron devices

Cited by 8 publications

References 4 publications

Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

A possible road to 77 K single-electron devices

Miniature tunnel junction by electron-beam-induced deposition

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