2020
DOI: 10.35848/1347-4065/ab91cf
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Step-edge and kink segregation models for analysis of reported step-velocity dependences of carbon concentration in GaN

Abstract: The correlation between step velocity and carbon incorporation during the step-flow growth of GaN was analyzed from the standpoints of the meantime until a carbon atom incorporated at the kink site moves through the step-edge site to the surface site, τ, and the length of time before the carbon concentration at the step-edge site reaches its equilibrium value, τ step . Reported step-velocity dependences of carbon concentration in GaN were successfully reproduced with the assumption of τ ? τ step or τ < τ step … Show more

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Cited by 5 publications
(11 citation statements)
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“…23) Impurity segregation during MOVPE, on the other hand, has been quantitatively analyzed as a function of step velocity V step in the case of carbon in GaN. 25) Accordingly, in this paper, we first estimate the values of V step on the gently and sharply sloped surfaces and then apply the reported stepedge segregation model 25) to quantitatively analyze the magnesium segregation reported in Ref. 23.…”
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“…23) Impurity segregation during MOVPE, on the other hand, has been quantitatively analyzed as a function of step velocity V step in the case of carbon in GaN. 25) Accordingly, in this paper, we first estimate the values of V step on the gently and sharply sloped surfaces and then apply the reported stepedge segregation model 25) to quantitatively analyze the magnesium segregation reported in Ref. 23.…”
mentioning
confidence: 99%
“…23) According to the experiments by Benzarti et al, 37) D is 3.0 × 10 −14 cm 2 s −1 at T g = 1100 °C. With this D value, a of 0.30 nm, 25) and Eq. ( 8), we fitted the normalized N s , taking N step /N surf as a parameter.…”
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confidence: 99%
“…As suggested by Šichman et al, 19) residual stress in GaN can influence residual carbon impurity. Considering a large strain around the carbon occupying a gallium site (C Ga ) in GaN (because of the bond length of C Ga being 18%-26% shorter than the Ga-N bond length), 4,[20][21][22] the present authors assumed that the segregation coefficient k of C Ga is less than unity 23) and that the concentration ratio of carbon adatoms to gallium adatoms around step-edge site is about the same as that at the surface site. They rewrote the equation for the step-edge segregation model 24,25) as 23)…”
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confidence: 99%
“…When τ step > τ, on the other hand, the kink segregation model 26,27) applies. If the impurity concentration at the kink site is an equilibrium value of N kink , N is expressed in the kink segregation model as 23)…”
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