Step and flash imprint lithography: a new approach to high-resolution patterning

Colburn, Matthew; Johnson, Stephen C.; Stewart, M. D.; Damle, Shilpa; Bailey, Todd; Choi, Bernard; Wedlake, M.; Michaelson, Timothy B.; Sreenivasan, S. V.; Ekerdt, John G.; Willson, C. Grant

doi:10.1117/12.351155

Cited by 553 publications

(262 citation statements)

References 6 publications

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“…͓DOI: 10.1063/1.1868074͔ Nanoimprint lithography is an emerging nanofabrication technique that enables both high resolution and rapid throughput. Variations based on solid phase cutting and stamping, 1,2 hot embossing, [3][4][5] or liquid molding 6,7 have been reported. All techniques share the common requirement that during the forming process, sufficient sample material flow must ensue to guarantee pattern transfer fidelity, while all other parasitic deformation ͑such as that arising from demolding stresses͒ must be minimized.…”

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confidence: 99%

Influence of elastic strains on the mask ratio in glassy polymer nanoimprint

Cross

O’Connell

Pethica

2005

Applied Physics Letters

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During glassy polymer nanoimprint, a supported film is extruded from protruding ͑punch͒ to recessed ͑cavity͒ regions of a patterned stamp. The completeness of this extrusion determines the mask ratio for lithographic applications. We show that, for a given punch contact size, there is a residual layer of unextruded material with a mean thickness that is independent of initial film thickness, stamping time, or applied maximum load. Depth sensing indentation enables us to monitor deformation during the imprinting as well as after, and so understand the deformation process involved. It is found that both the geometry and mean thickness of the residual layer are influenced by the overall elastic properties of the stamping system.

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confidence: 99%

Influence of elastic strains on the mask ratio in glassy polymer nanoimprint

Cross

O’Connell

Pethica

2005

Applied Physics Letters

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“…The polymer is then 'fixed' by exposing the polymer to UV radiation [76] and cross-linking or cross-linking the polymer with a thermal cure [75]. After the cure, the imprint tool is removed and the polymer image remains on the surface.…”

Section: (C) Nanoimprintmentioning

confidence: 99%

Lithography for enabling advances in integrated circuits and devices

Garner

2012

Phil. Trans. R. Soc. A.

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Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

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“…1 Fig. 2 Non-uniformity of the residual layer due to 3D cavity patterns with different heights on a 3D SCIL template controlled dispense of the resist to match up with the local template pattern is employed using step and flash UVNanoImprint lithography (Colburn et al 1999). The limitation of this solution is the requirement of a dispensing system which is not applicable to all NanoImprint tools.…”

Section: Introductionmentioning

confidence: 99%

Highly uniform residual layers for arrays of 3D nanoimprinted cavities in Fabry–Pérot-filter-array-based nanospectrometers

et al. 2015

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Miniaturized optical spectrometers can be implemented by an array of Fabry-Pérot (FP) filters. FP filters are composed of two highly reflecting parallel mirrors and a resonance cavity. Each filter transmits a small spectral band (filter line) depending on its individual cavity height. The optical nanospectrometer, a miniaturized FPbased spectrometer, implements 3D NanoImprint technology for the fabrication of multiple FP filter cavities in a single process step. However, it is challenging to avoid the dependency of residual layer (RL) thickness on the shape of the printed patterns in NanoImprint. Since in a nanospectrometer the filter cavities vary in height between neighboring FP filters and, thus, the volume of each cavity varies causing that the RL varies slightly or noticeably between different filters. This is one of the few disadvantages of NanoImprint using soft templates such as substrate conformal imprint lithography which is used in this paper. The advantages of large area soft templates can be revealed substantially if the problem of laterally inhomogeneous RLs can be avoided or reduced considerably. In the case of the nanospectrometer, non-uniform RLs lead to random variations in the designed cavity heights resulting in the shift of desired filter lines. To achieve highly uniform RLs, we report a volume-equalized template design with the lateral distribution of 64 different cavity heights into several units with each unit comprising four cavity heights. The average volume of each unit is kept constant to obtain uniform filling of imprint material per unit area. The imprint results, based on the volume-equalized template, demonstrate highly uniform RLs of 110 nm thickness.

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Step and flash imprint lithography: a new approach to high-resolution patterning

Cited by 553 publications

References 6 publications

Influence of elastic strains on the mask ratio in glassy polymer nanoimprint

Influence of elastic strains on the mask ratio in glassy polymer nanoimprint

Lithography for enabling advances in integrated circuits and devices

Highly uniform residual layers for arrays of 3D nanoimprinted cavities in Fabry–Pérot-filter-array-based nanospectrometers

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