STEM-EELS investigation of c-Si/a-AlO  interface for solar cell applications

Noircler, Guillaume; Lebreton, Fabien; Drahi, Etienne; Coux, Patricia de; Warot-Fonrose, Bénédicte

doi:10.1016/j.micron.2021.103032

Cited by 2 publications

(3 citation statements)

References 59 publications

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“…Amorphous Al 2 O 3 contains both tetrahedral [AlO 4 ] 5À and octahedral [AlO 6 ] 9À coordination; therefore, the tetrahedrally and octahedrally coordinated Al with the energy loss of 2.4 eV in separate can be mapped across the interfacial regions of the Al 2 O 3 /GaN and Al 2 O 3 /Si heterostructures by EELS measurements. [27][28][29][30][31] EELS has been applied to characterize the Al 2 O 3 /Si heterostructure, and the tetrahedral [AlO 4 ] 5À coordination was found to dominate at the interface. [27][28][29]32] This study employs the identical method to measure the Al coordination at the Al 2 O 3 /GaN interface.…”

Section: Resultsmentioning

confidence: 99%

“…[27][28][29][30][31] EELS has been applied to characterize the Al 2 O 3 /Si heterostructure, and the tetrahedral [AlO 4 ] 5À coordination was found to dominate at the interface. [27][28][29]32] This study employs the identical method to measure the Al coordination at the Al 2 O 3 /GaN interface. [19,20] and the surface oxides of GaN and Si were observed at interfaces.…”

Section: Resultsmentioning

confidence: 99%

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Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures

Wang

2022

Physica Rapid Research Ltrs

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Al2O3 is used to form Al2O3/GaN and Al2O3/Si heterostructures for many electronic and optoelectronic devices. Yet the origins of the positive interfacial charges in the Al2O3/GaN heterostructure and negative interfacial charges in the Al2O3/Si heterostructure are often elusive. Herein, in‐depth studies of the Al2O3/GaN and Al2O3/Si heterostructures are conducted, especially on how the atomic coordination structure affects the interfacial charges. It is discovered that the octahedral [AlO6]9− coordination surpassed tetrahedral [AlO4]5− coordination at the Al2O3/GaN interface, whereas tetrahedral [AlO4]5− coordination dominated at the Al2O3/Si interface. Therefore, the interfacial charge polarity is correlated with the nonstoichiometry atomic coordination of Al2O3 at the two interfaces. This study reveals the atomic origin of charge polarity at high‐k/semiconductor interfaces and could facilitate the development of high‐performance optoelectronic and electronic devices through engineering the atomic coordination structure of the high‐k materials.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures

Wang

2022

Physica Rapid Research Ltrs

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“…Therefore, studying the c-Si/AlO x interface is an important issue. For example, investigation of the interfacial composition with the help of transmission electron microscopy (TEM) has revealed the existence of a mixed SiO x layer [ 18 , 19 , 20 ]. A high Q f density, as measured by corona charging experiments, provides a very strong field effect passivation [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Zheng

Gong

et al. 2021

Nanomaterials

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In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

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STEM-EELS investigation of c-Si/a-AlO interface for solar cell applications

Cited by 2 publications

References 59 publications

Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures

Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

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STEM-EELS investigation of c-Si/a-AlO interface for solar cell applications

Cited by 2 publications

References 59 publications

Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures

Correlative Atomic Coordination and Interfacial Charge Polarity in Al2O3/GaN and Al2O3/Si Heterostructures

Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

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Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures

Correlative Atomic Coordination and Interfacial Charge Polarity in Al₂O₃/GaN and Al₂O₃/Si Heterostructures