2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018
DOI: 10.1109/ulis.2018.8354733
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Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYO<inf>x</inf>

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“…Here we propose some techniques to improve the performance of FeFETs, especially for the scalability of FinFETs. The ferroelectric dielectric is full of oxygen vacancies in the oxide and traps in the interface, causing the degradation of ferroelectric properties [30]. To obtain highperformance FeFET, oxygen vacancies and interface traps need reducing.…”
Section: B Effect Of Channel Dimensions On Fefetsmentioning
confidence: 99%
“…Here we propose some techniques to improve the performance of FeFETs, especially for the scalability of FinFETs. The ferroelectric dielectric is full of oxygen vacancies in the oxide and traps in the interface, causing the degradation of ferroelectric properties [30]. To obtain highperformance FeFET, oxygen vacancies and interface traps need reducing.…”
Section: B Effect Of Channel Dimensions On Fefetsmentioning
confidence: 99%