Steady-state thermal characteristics of AMR read/write heads used in tape storage drives

Iben, Icko; Lee, Y.-M.; Hsiao, Wen-Ta

doi:10.1147/rd.474.0401

Cited by 10 publications

(12 citation statements)

References 15 publications

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“…no current flow needs to be applied. Moreover, no hard failures were detected and the activation energy of electromigration which is about 2 eV for NiFe [5] is significantly higher than we observed. Oxidation can be excluded as well, because the offset drift is less for passivation layers with a higher oxygen composition (see Section 4).…”

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confidence: 74%

Optimisation of surface passivation for highly reliable angular AMR sensors

Isler

Christoffer

Schoer

et al. 2010

Phys. Status Solidi (c)

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For state‐of‐the‐art angular sensors based on the anisotropic magnetoresistive (AMR) effect in NiFe layers, the angular accuracy over time is limited by a drift of the offset voltage of the Wheatstone bridge configuration. It is shown that the interaction of the passivation layer and the magnetic permalloy is crucial for the drift of the offset voltage. By investigating the time and temperature dependence, the offset drift is attributed to stress relief of the PECVD passivation layer due to microstructural changes. Hydrogen outdiffusion from the passivation layer is involved in the observed stress evolution. It is demonstrated that optimising the passivation layer composition as well as the time of the subsequent annealing is beneficial for stress stabilisation of the permalloy‐passivation layer system. With this optimised passivation layer a significant offset drift reduction of the NiFe Wheatstone bridge has been achieved resulting in highly accurate and long‐term stable angular AMR sensors. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 74%

Optimisation of surface passivation for highly reliable angular AMR sensors

Isler

Christoffer

Schoer

et al. 2010

Phys. Status Solidi (c)

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“…The average shield temperature rises from ~12% to ~66% that of the stripe between 66 and 1000 ns. 3D FEA shows that in equilibrium, the temperature at the gap-shield interface is about 75% that of the stripe [9]. As will be seen below, the effect of the shields on the thermal conductance is to slow down the decrease in κ mr versus time from times beyond about 20 ns.…”

Section: Iii4 One-dimensional Finite Difference Analysismentioning

confidence: 91%

“…Using Equation 5, the transition between the adiabatic and diffusion regimes is estimated to be between 1 to 3 ns by taking a diffusion distance of half the stripe thickness (21 nm), and taking literature values [5,8,9] for κ TAl of 1-to-3.5 W/m/ o K and C vAl of 3 J/cm 3 / o K The adiabatic and diffusion heat transfer regimes can be combined and approximated by a one-dimensional energy balance equation with the heat diffusing away from the stripe through both the front and back surfaces with a total area of 2 •H •W :…”

Section: Iii3 Phenomenological Model Of the Thermal Conductancementioning

confidence: 99%

“…For long times, the Joule heat deposited into the stripe is equal to the heat flux out of the stripe and steadystate is achieved. In steady-state, the thermal conductance (κ equ ) is given by [9]:…”

Section: Iii3 Phenomenological Model Of the Thermal Conductancementioning

confidence: 99%

“…Temperature independent heat capacities and thermal conductivities are used. The material thermal properties were taken from literature [5,8,9] with values which most closely reproduced the experimental data shown in Figures 1-2. A heat capacity of 3 J/cm 3 / o K was used for the gap alumina and 4 J/cm 3 / o K for the metals.…”

Section: Iii4 One-dimensional Finite Difference Analysismentioning

confidence: 99%

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Dynamic temperature rise of shielded MR sensors during simulated electrostatic discharge pulses of variable pulse width

Eric

Iben

2004

2004 Electrical Overstress/Electrostatic Discharge Symposium

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The temperature rise from Electrostatic discharge (ESD) of shielded AMR sensors used for magnetic tape storage devices is studied using square wave voltage pulses with widths from 35 ns to 2 ms. A phenomenological model has been developed to describe the dynamic stripe temperature versus pulse width and power for the time range studied as well as for a wide range in sensor geometries. The temperature required to melt the stripes was determined to be 1437 ± 69 o C. The activation energy required to achieve a 2% increase in stripe resistance for pulses between 100 ns and 1 ms was determined to be 2.8 eV and is associated with interdiffusion of the stripe metals.

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Magnetic Recording

2009

Esd

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Steady-state thermal characteristics of AMR read/write heads used in tape storage drives

Cited by 10 publications

References 15 publications

Optimisation of surface passivation for highly reliable angular AMR sensors

Optimisation of surface passivation for highly reliable angular AMR sensors

Dynamic temperature rise of shielded MR sensors during simulated electrostatic discharge pulses of variable pulse width

Magnetic Recording

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