Steady-state surface stress induced in noble gas sputtering

Dahmen, K. H.; Giesen, Margret; Ikonomov, Julian; Starbova, K.; Ibach, H.

doi:10.1016/s0040-6090(02)01182-3

Cited by 23 publications

(16 citation statements)

References 24 publications

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“…Others have shown that ion implantation will cause stresses in the target material [4][5][6]. Here we show experimentally that ion implantation is well suited for folding membranes in the Nanostructured Origami method because the fold radius can be as small as 400 nm, allowing for membranes to be folded in face-to-face contact.…”

Section: Introductionmentioning

confidence: 70%

Membrane folding by ion implantation induced stress to fabricate three-dimensional nanostructures

Arora

Smith

Barbastathis

2007

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 70%

Membrane folding by ion implantation induced stress to fabricate three-dimensional nanostructures

Arora

Smith

Barbastathis

2007

Microelectronic Engineering

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“…For low energies, however, this term cannot be neglected. In this case, sputter removal can lead to the stress saturating at a steady-state value even in the absence of any stress relaxation mechanisms [6].…”

Section: Analysis and Stress Modelmentioning

confidence: 99%

“…There has been previous experimental work on stress in the low-energy regime performed on crystalline metals [6][7][8][9][10]. Dahmen et al [6] studied stress in Cu due to noble gas ion bombardment and explained the steady state stress as a balance between stress induced by implantation and the sputter removal of the bombarded layer.…”

mentioning

confidence: 99%

“…Dahmen et al [6] studied stress in Cu due to noble gas ion bombardment and explained the steady state stress as a balance between stress induced by implantation and the sputter removal of the bombarded layer. Chan et al [7] also found a compressive steady-state stress in Cu, but found that the stress relaxes to a tensile state after stopping the ion bombardment.…”

mentioning

confidence: 99%

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Stress evolution in Si during low-energy ion bombardment

Ishii

Madi

Aziz³

et al. 2014

J. Mater. Res.

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Measurements of stress evolution during low energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis we determine a value for the fluidity per flow defect.

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“…Employing a wafer curvature technique, Dahmen et al (2003) found that the bombardment of single crystal copper with noble-gas ions of 0.8-2.2 keV produced compressive surface stresses that initially increase linearly with fluence until they gradually saturate. The saturated value of the compressive stresses depended on the ion mass and ion energy; the lighter the ion mass or the higher the ion energy, the larger the saturated value of the compressive stress.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments

Kim

Chew²,

Chason

et al. 2012

Proc. R. Soc. A.

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Here, we uncover three new nanoplasticity mechanisms, operating in highly stressed interstitial-rich regions in face-centred-cubic (FCC) metals, which are particularly important in understanding evolution of surface stress and morphology of a FCC metal under low-energy noble-gas ion bombardments. The first mechanism is the configurational motion of self-interstitials in subsonic scattering during ion bombardments. We have derived a stability criterion of self-interstitial scattering during ion embedding, which consistently predicts the possibility of vacancy-and interstitial-rich double-layer formation for various ion bombardments. The second mechanism is the growth by gliding of prismatic dislocation loops (PDLs) in a highly stressed interstitial-rich zone. This mechanism allows certain prismatic dislocations with their Burgers vectors parallel to the surface to grow in subway-glide mode (SGM) during ion bombardment. The SGM growth creates a large population of nanometre-sized prismatic dislocations beneath the surface. The third mechanism is the Burgers vector switching of a PDL that leads to unstable eruption of adatom islands during certain ion bombardments of FCC metals. We have also derived the driving force and kinetics for the growth by gliding of prismatic dislocations in an interstitial-rich environment as well as the criterion for Burgers vector switching, which consistently clarifies previously unexplainable experimental observations.

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Steady-state surface stress induced in noble gas sputtering

Cited by 23 publications

References 24 publications

Membrane folding by ion implantation induced stress to fabricate three-dimensional nanostructures

Membrane folding by ion implantation induced stress to fabricate three-dimensional nanostructures

Stress evolution in Si during low-energy ion bombardment

Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments

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