Steady-state photocarrier grating technique for the minority-carrier characterisation of thin-film semiconductors

Brüggemann, R.

doi:10.1088/1742-6596/253/1/012081

Cited by 12 publications

(18 citation statements)

References 36 publications

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“…where L is the diffusion length (average distance covered by carrier before recombination) and F ¼ gg d g 0 2 , is a t parameter (0.5 # F # 1), with g the 'Rose coefficient' calculated from photoconductivity versus light intensity plot, g d is the ratio between dark and total current under illumination and g 0 represents the grating quality factor which in turn describes the reduction of the fringe visibility. 57 The diffusion length L is related to the mobility-lifetime product of minority carriers (i.e. holes in the present case) by the relation: 58…”

Section: Resultsmentioning

confidence: 99%

Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

Singh

Kaur

et al. 2017

RSC Adv.

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Section: Resultsmentioning

confidence: 99%

Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

Singh

Kaur

et al. 2017

RSC Adv.

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“…A particularly elegant and swift alternative method is the steady‐state photocarrier grating (SSPG) technique, which can be performed under conditions that are close to the operating conditions of solar cells and using thin‐film samples not requiring selective contacts characterised with only basic optical and electronic equipment. Since the method was established by Ritter, Zeldov and Weiser , it has been used predominantly for the characterisation of thin‐film silicon and related materials .…”

Section: Introductionmentioning

confidence: 99%

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Veldhuizen

Adhyaksa

Theelen

et al. 2017

Progress in Photovoltaics

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In this study, we assess the charge carrier diffusive transport quality of traditional and emerging thin-film photoactive absorber materials used for photovoltaic applications. We use a steady-state photocarrier grating technique, which has so far been predominantly used for amorphous silicon-based materials, to obtain ambipolar diffusion lengths as well as minority and majority carrier mobility-lifetime products. The measurements are performed at volume-averaged generation rates of G = 10 20 -10 21 cm À3 s À1 and low electric field strengths of E = 20-200 V cm À1 . The absorbing capability of the materials is analysed by calculating an effective optical absorption depth, and we compare its value with the obtained electronic ambipolar diffusion length. The effective absorption depths are independent of the band-gap values so that our assessment is also relevant for multijunction solar cells. We observe that for silicon-based thin-film materials, the ambipolar diffusion length (with a value lower than 150 nm) is more than twice as short as their effective absorption depth, while for copper indium gallium selenide chalcopyrite and halide perovskite materials, the diffusion length (with a value up to 367 nm) is similar or larger than the effective absorption depth. The presented method can be used as a rapid assessment of the optoelectronic quality of photoactive thin-film materials.

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“…The mobility Â lifetime products, mt, can be deduced from the experimental data and equation (5) for s ph or from equation (9) of reference [12] for L amb . Before light-soaking, one finds mt s ≈ 2Â10 À6 and mt L ≈ 5Â10 À8 cm 2 /V, and after light-soaking we have mt s ≈ 5 Â 10 À7 and mt L ≈ 5Â10 À8 cm 2 /V.…”

Section: Discussionmentioning

confidence: 99%

“…Since the pioneering work of Ritter et al many publications were dedicated to a thorough study of the SSPG technique. It is impossible to quote all of them and the reader may refer to reviews of the SSPG technique and its application to several types of thin films proposed by R. Brüggemann [12,13].…”

Section: Methodsmentioning

confidence: 99%

Study of transport parameters and defect states in thin film perovskites under different environments − air or vacuum − and after light-soaking

Longeaud

2020

EPJ Photovolt.

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We present some advanced characterization techniques developed to investigate on the opto-electronic properties of thin film semiconductors and apply them to perovskite layers. These techniques are the steady state photocarrier grating (SSPG) and the Fourier transform photocurrent spectroscopy (FTPS). The SSPG was developed to study the ambipolar diffusion length of carriers and the FTPS was imagined to measure the variations of the below gap absorption coefficient with the light energy, giving information on the defect densities of the gap responsible for this absorption. The potentialities of these techniques are first detailed and then exemplified by their application to thin film perovskites. To study their stability, these films were exposed to different environments, air or vacuum, and in their as-deposited state or after light-soaking with heavy light. We find that the diffusion length and density of states are quite stable, even after light-soaking, and suggest that the degradation of devices exposed to 1 sun mainly comes from the evolution of the contacts instead of the perovkite itself.

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Steady-state photocarrier grating technique for the minority-carrier characterisation of thin-film semiconductors

Cited by 12 publications

References 36 publications

Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

Benchmarking photoactive thin‐film materials using a laser‐induced steady‐state photocarrier grating

Study of transport parameters and defect states in thin film perovskites under different environments − air or vacuum − and after light-soaking

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