Steady-State and Transient Electron Transport within Bulk InAs, InP and GaAs: An Updated Semiclassical Three-Valley Monte Carlo Simulation Analysis

Abstract

<p align="justify"> <span style="font-family:verdana;">An ensemble Monte Carlosimulation is used to compare high field electron transport in bulk InAs, InP and GaAs. In particular, velocity overshoot and electron transit times are examined. For all materials, we find that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material, about 3 kV/cm for InAs, 10 kV/cm for InP and 5 kV/cm for the case of GaAs, We find that InAs exhibits the highest peak overshoot velocity and that this velocity overshoot lasts over the longest distances when compared with GaAs and InP. Finally, we estimate the minimum transit time across a 1 μm InAs sample to be about 2 ps. Similar calculations for InP and GaAs yield 6.6 and 5.4 ps, re</span><span style="font-family:verdana;">spectively. We find that the optimal cutoff frequency for an ideal InAs based device ranges from around 79 GHz when the device thickness is set to 1 μm. We thus suggest that indium arsenide offers great promise for future high-speed device applications. The steady-state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.</span> </p

Modified Uni-Traveling-Carrier Photodetector with Its Optimized Cliff Layer

“…For thick collection layers longer than 500 nm, the electron's transient overshoot characteristic will lose its advantage, and PD's saturation output current density J max cannot acquire great improvement. Under such conditions, the electron's transit peak velocity characteristic makes up for this drawback [27]. According to the electric fieldvelocity relationship of the electron's transit performance in InP, under certain low electric field intensity regions, the electron can travel at its peak velocity, which is times of its saturation velocity.…”

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

“…In addition, the high field gradient at the sample surface induced by the high extractor voltage between the PEEM objective lens and the sample surface (30 kV cm À1 ) enhances this electron transport from C to L and X valleys. 27,28 As a result of the use of a small aperture in this experiment to reduce the spherical aberration of photo-emitted electrons, mainly the electrons emitted along the direction normal to the surface, i.e., the electrons in the C valley, contribute to the PEEM signal (see for example Ref. 29).…”