Status Quo and trends of GaN power devices

Abstract

This paper reviews the recently developed technologies for GaN-based power devices which is coming close to the practical application. Experimentally fabricated GaN inverter system attained the world-highest conversion efficiency over 99.3% by using GIT (Gate Injection Transistor). Reliability issues become increasingly essential due to the increase of power density of GaN-based device. Passivation technique is addressed in view of improving the on-resistance as well as suppressing the current collapse. Direct liquid-immersion package is also demonstrated, where junction temperature is drastically reduced in the built-in heat pipe structure.