Status and perspectives of hydrogenated amorphous silicon detectors for MIP detection and beam flux measurements

Menichelli, M.; Servoli, L.; Wyrsch, Nicolas

doi:10.3389/fphy.2022.943306

Cited by 5 publications

(4 citation statements)

References 38 publications

(31 reference statements)

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“…Overall, a-Si:H is suitable for the fabrication of low ionizing radiation sensor. MIP detection is challenging, but further research on material properties and 3D detectors are underway [46,47].…”

Section: Direct Deposition On Asicsmentioning

confidence: 99%

Thin film charged particle detectors

et al. 2023

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Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to inactive materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TVs and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.

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Section: Direct Deposition On Asicsmentioning

confidence: 99%

Thin film charged particle detectors

et al. 2023

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“…These attributes makes a-Si:H a useful material in various applications, including solar cells, radiation detectors, and electronic devices [1].…”

Section: Introductionmentioning

confidence: 99%

“…In order to achieve the proper hydrogen content, the film is grown from a mixture of Silane (SiH4) and hydrogen at temperatures ranging from 250 to 300 • C. Due to the low deposition temperature of a-Si:H, it can be easily deposited on plastic materials. This allows the sensor to exhibit strong adaptability to curved surfaces and notable flexibility [2].…”

Section: Introductionmentioning

confidence: 99%

“…The HASPIDE project [4] focuses on developing a-Si:H sensors deposited on PI. The envisioned applications include beam monitoring for high-energy physics and TRansmission Detectors (TRD) for electron and proton clinical accelerators, X-ray beam dose profiling for medical and industrial purposes, detectors for solar flare events in space missions [5], and neutron detection for industrial, nuclear safeguard, and homeland security applications [4].…”

Section: Introductionmentioning

confidence: 99%

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HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Tosti,

Antognini,

Aziz

et al. 2024

J. Inst.

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Hydrogenated amorphous silicon (a-Si:H) is a material with a very good radiation hardness and with the possibility of deposition on flexible substrates like Polyimide (PI). Exploiting these properties, the HASPIDE (Hydrogenated Amorphous Silicon PIxels DEtectors) project has the goal of developing a-Si:H detectors on flexible substrates for beam dosimetry and profile monitoring, neutron detection and space experiments. The detectors for this experiment will be developed in two different structures: the n-i-p diode structure, which has been used up to now for the construction of the planar a-Si:H detectors, and the recently developed charge selective contact structure. In the latter the doped layers (n or p) are replaced with charge selective materials namely electron-selective conductive metal-oxides (TiO2 or Al:ZnO) and hole-selective conductive metal oxides (MoO x ). In this paper preliminary data on the capabilities of these detectors to measure X-ray and electron fluxes will be presented. In particular, the linearity, the sensitivity, the stability and dark current in various conditions will be discussed.

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