Status and issues of electron projection lithography

Yamabe, Masaki

doi:10.1117/1.1862648

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…[16] Given the low exposed area, multie-beams or electron-projection-lithography may also be considered. [17] The Metal-1 layer requires double patterning at 22nm because of the 70nm pitch. The line pattern can be created by techniques like SADP which allows patterning at twice the final pitch, then using sidewall spaces to double the spatial frequency.…”

Section: Simulation Results For 22nm Logicmentioning

confidence: 99%

32nm and below logic patterning using optimized illumination and double patterning

Smayling

Axelrad

2009

SPIE Proceedings

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Line/space dimensions for 32nm generation logic are expected to be ~45-50nm at ~90-100nm pitch. It is likely that the node will begin at the upper end of the range, and then shrink by ~10% to a "28nm" node. For the lower end of the range, even with immersion scanners, the Rayleigh k 1 factor is below 0.32. The 22nm logic node should begin with minimum pitches of approximately 70nm, requiring some form of double patterning to maintain k 1 above 0.25.Logic patterning has been more difficult than NAND Flash patterning because random logic was designed with complete "freedom" compared to the very regular patterns used in memory. The logic layouts with bends and multiple pitches resulted in larger rules, un-optimized illumination, and a poorly understood process windows with little control of context-dependent "hot spots."[1]The introduction of logic design styles which use strictly one-directional lines for the critical levels now gives the opportunity for illumination optimization. Gridded Design Rules (GDR) have been demonstrated to give areacompetitive layouts at existing 90, 65, and 45nm logic nodes while reducing CD variability.[2] These benefits can be extended to ≤32nm logic using selective double pass patterning.

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Section: Simulation Results For 22nm Logicmentioning

confidence: 99%

32nm and below logic patterning using optimized illumination and double patterning

Smayling

Axelrad

2009

SPIE Proceedings

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“…58,73 Projection electron lithography methods may address this issue. 74 Another challenge is that multiple proteins would be difficult and time consuming due to alignment issues and the required vacuum chamber. However, the above mentioned approach of etching different sized features and incubating with smaller and smaller nanoparticles was reported as one potential way to array multiple proteins.…”

Section: Electron Beam Lithographymentioning

confidence: 99%

Nanopatterning proteins and peptides

Enriquez-Rios²,

2006

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“…Generally, in conventional lithography, patterns of the photosensitive material receive strong mechanical force during drying of rinse liquid, then the patterns become unstable, and finally collapse or are distorted as the aspect ratio of pillar height to pitch increases. [8][9][10] The capillary force due to the surface tension of the rinse solvent has potential to make new patterns of photosensitive materials.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of periodic arrays of top-gathering titania-organic hybrid pillars derived from multi-beam laser interference

Segawa

Misawa

Yano

et al. 2006

Photon Processing in Microelectronics and Photonics V

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Multi-beam laser interference (MLI) lithography is known to be one of the fabrication techniques of photonic crystals. In MLI lithography, laser beams are interfered on a scale of the wavelength of light and are irradiated to photosensitive films. We have paid attention to photosensitive TiO 2-organic hybrid film, which has high refractive index. TiO 2-organic hybrid periodic pillar patterns were fabricated by MLI lithography. The TiO 2 hybrid film, which was prepared from Ti-alkoxide and β-diketone by the sol-gel method, was exposed to the interference pattern of femtosecond pulses at 800 nm wavelength. After laser irradiation, the unirradated portion was removed by the development and rinse. Two-dimensional periodic standing alone pillars and 2 × 2 and 3 × 3 top-gathering pillars, which were gathered at the top by means of self-organization were formed by changing conditions such as laser irradiation time and film thickness. The pillar patterns depended upon the rinse liquid, the diameter, and the height of pillars. The top-gathering pillars are applicable for diffractive optics.

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Status and issues of electron projection lithography

Cited by 8 publications

References 33 publications

32nm and below logic patterning using optimized illumination and double patterning

32nm and below logic patterning using optimized illumination and double patterning

Nanopatterning proteins and peptides

Fabrication of periodic arrays of top-gathering titania-organic hybrid pillars derived from multi-beam laser interference

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