Status and design challenges of 60 GHz passive bandpass filters in standard CMOS

Mouthaan, Koen; Hu, Feng; Zijie, Hu; Taslimi, Azadeh

doi:10.1109/ieee-iws.2013.6616729

Cited by 3 publications

(1 citation statement)

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“…Waveguide-type filters typically have low insertion loss and high selectivity but they are bulky. On the other hand, on-chip planar filters [7][8][9][10][11][12][13][14][15][16][17][18][19][20] offer more compact solution but they are lossy particularly when realised in low-resistivity substrate technology. For example, in [21], a third-order band-pass filter designed at 9.45 GHz and realised in 130 nm complementary metal-oxide semiconductor (CMOS) technology exhibited a rather high insertion loss of 15.6 dB.…”

Section: Introductionmentioning

confidence: 99%

Holistic design strategy for high‐selectivity low‐loss integrated millimetre‐wave image‐reject filters

Thian

Fusco

2015

IET Circuits, Devices & Systems

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Abstract:To alleviate practical limitations in the design of mm-wave on-chip imagereject filters, systematic design methodologies are presented. Three low-order filters with high-selectivity and low-loss characteristics are designed and compared.Transmission zeroes are created by means of a quarter-wave transmission line (filter 1) and a series LC resonator (filters 2 and 3). Implemented on SiGe, the filters occupy 0.125, 0.064, and 0.079 mm 2 chip area including pads. The measured transmission losses across 81-86 GHz E-Band frequency range are 3.6-5.2 dB for filter 1, 3.1-4.7 dB for filter 2 and 3.6-5 dB for filter 3 where rejection levels at the image band are greater than 30 dB.

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