Statistical modeling for efficient parametric yield estimation of MOS VLSI circuits

Cox, P.; Yang, Ping; Chatterjee, P.K.

doi:10.1109/iedm.1983.190486

Cited by 10 publications

(9 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…If π(p) takes only the values zero and unity, we will find a point set in the process parameter space where π(p) is unity, and call this the acceptance region or yield body [8].…”

Section: G Acceptance Region and Process Windowmentioning

confidence: 99%

A Yield Model Incorporating Random and Systematic Yield Part I: Theory

Melzner

2008

2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

Abstract⎯Since the introduction of the Negative Binomial yield model and Critical Area Analysis in the 1980s, a golden methodology for modeling, prediction, and analysis of "random" or particle induced yield is in place and has been successfully applied for decades. Unfortunately, this level of maturity is not observed for modeling of "systematic" yield loss. In this paper, we will review and discuss the basics of a yield model that incorporates both "random" and "systematic" effects. Special focus will be on clarification of terms, underlying assumptions and corresponding limitations of the model. Part II of this paper is planned to be presented on a future ASMC conference. It will focus on practical application of the model in the field of lithography.

show abstract

“…If π(p) takes only the values zero and unity, we will find a point set in the process parameter space where π(p) is unity, and call this the acceptance region or yield body [8].…”

Section: G Acceptance Region and Process Windowmentioning

confidence: 99%

A Yield Model Incorporating Random and Systematic Yield Part I: Theory

Melzner

2008

2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

View full text Add to dashboard Cite

show abstract

“…At flat-band condition, the surface band bending and the semiconductor charge are both small and can be neglected. Here the classical MOS theory can be safely applied without considering partial differential equation and quantum mechanism, thus simplifying the extracting of thickness procedure [46].…”

Section: Computation Of Flat-band and Power Dissipationmentioning

confidence: 99%

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

2011

View full text Add to dashboard Cite

In this paper, we have analyzed a 45-nm RF CMOS switch design technology with the double-pole fourthrow circuit by using independently controlled double-gate MOSFET. The proposed switch reduces the number of transistors and increases the logic density per unit area as compare to the conventional CMOS switch. With the unique independent double-gate properties, we have demonstrated the potential advantages in terms of the drain current, threshold voltage, attenuation with ON resistance, flat-band capacitances, charge density and power dissipation of the proposed switch, which provides a switch with a significant drive circuit that is free from the signal propagation delay and additional voltage power supply. Moreover, the main emphasis is to provide a plurality of such switches arranged in a densely configured switch array, which provides a lesser attenuation, and better isolation with fast switching speed.

show abstract

“…Research has been conducted on efficient statistical modeling methods, leading to a variety of techniques, such as equivalent circuit-based parameter extraction method [3], factor analysis [4], [5], and response surface methodology (RSM) [6], [7]. The equivalent circuit-based statistical model is developed through repetitive optimization-based parameter extractions.…”

Section: Introductionmentioning

confidence: 99%

Portable Space Mapping for Efficient Statistical Modeling of Passive Components

Zhang¹,

Aaen²,

Wood³

2012

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

Abstract-In this paper, a portable space mapping technique is presented for efficient statistical modeling of passive components. The proposed technique utilizes the cost-effective model composition of a statistical space mapping, while introducing the portable mapping concept for flexible model development for passive modeling. The portable mapping is a single-developmentmultiple-use versatile wrapper, such that after development it can be conveniently combined with any nominal model to form a set of statistical models of different speed and accuracy. This provides variety in model selection for different design needs. To further reduce modeling cost, i.e., the simulation time required for model data generation, a smart sampling technique is used to achieve better sampling fidelity with smaller sample size. The portable statistical mapping technique is demonstrated through modeling a transmission line and a spiral inductor.

show abstract

Statistical modeling for efficient parametric yield estimation of MOS VLSI circuits

Cited by 10 publications

References 3 publications

A Yield Model Incorporating Random and Systematic Yield Part I: Theory

A Yield Model Incorporating Random and Systematic Yield Part I: Theory

Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology

Portable Space Mapping for Efficient Statistical Modeling of Passive Components

Contact Info

Product

Resources

About