Abstract:Background: Stochastic processes leading voltage-gated ion channel dynamics on the nerve cell membrane are a sufficient condition to describe membrane conductance through statistical mechanics of disordered and complex systems. Results: Voltage-gated ion channels in the nerve cell membrane are described by the Ising model. Stochastic circuital elements called ”Ising machines” are introduced. Action potentials are described as quasi-particles of a statistical field theory for the Ising system. Conclusions: The … Show more
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