Statistical Circuit Design: Characterization and Modeling for Statistical Design

Abstract

Analysis of the variation in the electrical performance of integratedcircuit structures requires a knowledge of the distributions and inter relationships of device parameter values. This article presents new techniques for more accurate transistor modeling and describes the statistical characterization procedure developed to describe the inte grated circuit manufacturing process as far as the measurable elec trical parameters are concerned.1108 THE BELL SYSTEM TECHNICAL JOUBNAL, APBIL 1971 *The choice of parameter names for the transport model are identical with the CIRCUS' convention; the injection model parameter names are selected to prevent ambiguity. The parameters used are defined in Table I.

Modeling for circuit and system design

“…1 is identical to that shown in other publications, this particular implementation allows a number of important effects to be taken into account in addition to giving considerable simplification in measurements [2]. The important features are that the model is based on the currents traversing the base region (rather than the currents injected at the junctions) and the collector output resistance (Early effect) is included by a simple yet efficient technique [2] which is applicable to existing computer analysis programs.…”

“…The problem which ought to be addressed involves a coordinated effort on all aspects of characterization previously identified. The following sections consider such an effort: describe ideas which have had impact on the approach to characterization being developed [2] in the Transmission Division at Bell Telephone Laboratories; and consider the practical implementation of the necessary measurement support.…”

“…The difficulties which arise usually result from differences in perspective of different groups as to what is required. The characterization mentioned earlier [2] was initiated in the computer-aided analysis area using as a goal the ability to support the activity spectrum described in Section 11.…”

Modeling of three terminal devices: A black box approach

“…Among other things, model A is capable of simulating all features possessed by the dc version of the Gummel-Poon model 1151. However, the parameters associated with model A can be determined much more easily than that requirlzd by Gummel and Poon [l.S]- [17].…”

Computer Analysis of Integrated Circuits (CAIC)

“…2a. This is the transport version (Logan 1971, Getreu 1974 of Ebers-Moll large-signal transistor model. Note that the transfer and not the input characteristics are assumed to be exponential.…”