2015
DOI: 10.1016/j.jcrysgro.2015.03.002
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Static sublimation purification process and characterization of LiZnP semiconductor material

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Cited by 4 publications
(6 citation statements)
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“…The as‐prepared nitrides include Group II (Mg, Ca, Sr, and Ba) nitrides (Figure a) and Group III nitrides, such as GaN 3 and Al 2 N 4 , with doped lanthanide ions. Typical phosphides include zinc (Figure b) and lanthanum phosphides …”
Section: Ampoule Methods For the Synthesis Of Materialsmentioning
confidence: 99%
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“…The as‐prepared nitrides include Group II (Mg, Ca, Sr, and Ba) nitrides (Figure a) and Group III nitrides, such as GaN 3 and Al 2 N 4 , with doped lanthanide ions. Typical phosphides include zinc (Figure b) and lanthanum phosphides …”
Section: Ampoule Methods For the Synthesis Of Materialsmentioning
confidence: 99%
“…The as-prepared nitrides include Group II (Mg, Ca, Sr, and Ba) nitrides (Figure 5a) [44][45][46] and Group III nitrides, such as GaN 3 [47] and Al 2 N 4 , [48] with doped lanthanide ions. Typical phosphidesi nclude zinc (Figure 5b) [49][50][51] and lanthanum phosphides. [52][53][54] Chalcogenidesc an be easily synthesized in vacuum-sealed ampoules.…”
Section: Ampoule Methods For the Synthesis Of Materialsmentioning
confidence: 99%
“…The synthesized material was purified by a static sublimation process. The process appeared to successfully separate both the ternary LiZnP and LiZnAs material, from elemental and binary residual materials that often result from the synthesis process [2,3]. This purified LiZnP and LiZnAs material were subsequently grown into bulk crystals under a high-temperature vertical Bridgman technique [4,5].…”
Section: Device Processing and Fabricationmentioning
confidence: 99%
“…Material purification post ternary synthesis [2,3] reduced the conductivity, and employing Ti/Au contacts also helped produce relatively stable devices, where silver epoxy contacts always resulted in high conductivity devices. Many devices fabricated from bulk grown ingots processed from the in-house synthesized and purified material exhibited a typical ohmic resistance I-V curve, as shown in Fig.…”
Section: I-v Curvesmentioning
confidence: 99%
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