2013
DOI: 10.1016/j.commatsci.2013.07.044
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Static dielectric response and polar phonons of Ba(Mn1/3Nb2/3)O3 and Ba(Ni1/3Nb2/3)O3 complex perovskites

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Cited by 3 publications
(5 citation statements)
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“…Such a phenomenon is in accordance with the observation that the high-spin Mn 2+ -containing compounds, such as columbite MnNb 2 O 6 and complex perovskite Ba 3 MnNb 2 O 9 , possess higher conductivity and microwave dielectric loss compared with the Zn 2+ analogues, which may be explained using their electronic structures depending on the 3d electron configurations of the high-spin d 5 Mn 2+ and fully filled d 10 Zn 2+ . As for the electronic conduction over the extrinsic band gap, in the Mott insulator BMN (similar to the 3C ordered Ba 3 MnNb 2 O 9 ), the electrons mainly hop from VBM Mn 3d orbits to CBM Nb 4d orbits (Figure a–c) over a ∼2.0 eV gap. This is much smaller than that (∼3.9 eV) for the charge-transfer insulator BZN, where the electrons mainly hop from the VBM O 2p orbits to CBM Nb 4d orbits (Figure d–f).…”
Section: Discussionmentioning
confidence: 95%
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“…Such a phenomenon is in accordance with the observation that the high-spin Mn 2+ -containing compounds, such as columbite MnNb 2 O 6 and complex perovskite Ba 3 MnNb 2 O 9 , possess higher conductivity and microwave dielectric loss compared with the Zn 2+ analogues, which may be explained using their electronic structures depending on the 3d electron configurations of the high-spin d 5 Mn 2+ and fully filled d 10 Zn 2+ . As for the electronic conduction over the extrinsic band gap, in the Mott insulator BMN (similar to the 3C ordered Ba 3 MnNb 2 O 9 ), the electrons mainly hop from VBM Mn 3d orbits to CBM Nb 4d orbits (Figure a–c) over a ∼2.0 eV gap. This is much smaller than that (∼3.9 eV) for the charge-transfer insulator BZN, where the electrons mainly hop from the VBM O 2p orbits to CBM Nb 4d orbits (Figure d–f).…”
Section: Discussionmentioning
confidence: 95%
“…The half-filled Mn 3d orbits in BMN could soften infrared modes, which increases the lattice vibration anharmonicity and therefore the intrinsic dielectric loss. 49 On the other hand, resonant spin excitation of unpaired transition-metal d electrons has been recently recognized as a noticeable origin of the microwave dielectric loss of transitionalmetal-doped complex perovskite Ba 3 ZnTa 2 O 9 resonators at cryogenic temperatures. 51 This mechanism could be also applicable here to BMN, which contains large amounts of unpaired d electrons in the high-spin Mn 2+ .…”
Section: ■ Discussionmentioning
confidence: 99%
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“…In general, the compounds containing transitional metal cations with partially filled 3 d shells have higher dielectric loss than the Mg 2+ /Zn 2+ analogues, implying an important role of 3 d electron number or d shell configuration on controlling the dielectric loss . Electronic structure calculation of Ba 3 MnNb 2 O 9 and Ba 3 NiNb 2 O 9 indicates that the half-filled t 2g orbitals in Mn 2+ and fully filled t 2g orbitals in Ni 2+ are responsible for the difference between their lattice vibration modes: the half-filled Mn t 2g orbitals soften infrared modes and increase lattice vibration inharmonicity and therefore the intrinsic loss . The 3 d electronic configuration of the high-spin d 5 Mn 2+ cations may also explain the origin of the high dielectric loss of the 14-layer twinned BMT material.…”
Section: Discussionmentioning
confidence: 99%
“…32 Electronic structure calculation of Ba 3 MnNb 2 O 9 and Ba 3 NiNb 2 O 9 indicates that the half-filled t 2g orbitals in Mn 2+ and fully filled t 2g orbitals in Ni 2+ are responsible for the difference between their lattice vibration modes: the half-filled Mn t 2g orbitals soften infrared modes and increase lattice vibration inharmonicity and therefore the intrinsic loss. 33 The 3d electronic configuration of the high-spin d 5 Mn 2+ cations may also explain the origin of the high dielectric loss of the 14-layer twinned BMT material. However, the dielectric loss is generally highly sensitive to the processing which significantly impacts the extrinsic loss associated with the porosity, cationic order, and secondary phase formation.…”
Section: Chemistry Of Materialsmentioning
confidence: 99%